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Display apparatus including connecting electrode layer

專利號
US12082461B2
公開日期
2024-09-03
申請人
Samsung Display Co., Ltd.（KR Yongin-si）
發(fā)明人
Seunghwan Cho; Jiryun Park; Seokje Seong; Inhyuck Yeo; Wonsuk Choi; Yoonsun Choi
IPC分類
H01L27/14; G09G3/3283; H10K59/121; H10K59/131; H01L27/12; H01L29/786
技術(shù)領(lǐng)域
wiring,line,connection,layer,may,gate,electrode,first,dv3,dv1
地域： Yongin-si

摘要

A display apparatus includes a first semiconductor layer disposed on a substrate; a first gate layer disposed on the first semiconductor layer, the first gate layer including a driving gate electrode; a second gate layer disposed on the first gate layer, the second gate layer including a capacitor upper electrode; a first connecting electrode layer disposed on the second gate layer, the first connecting electrode layer including a transfer wiring; a second connecting electrode layer disposed on the first connecting electrode layer, the second connecting electrode layer including a horizontal connection wiring extending in a first direction; and a third connecting electrode layer disposed on the second connecting electrode layer, the third connecting electrode layer including a vertical connection wiring extending in a second direction that intersects the first direction.

說明書

The third gate layer 1500 may include metal, an alloy, conductive metal oxide, a transparent conductive material, etc. For example, the third gate layer 1500 may include argentum (Ag), an alloy including argentum, molybdenum (Mo), an alloy including molybdenum, aluminum (Al), an alloy include aluminum, aluminum nitride (AlN), tungsten (W), tungsten nitride (WN), copper (Cu), nickel (Ni), chromium (Cr), chromium nitride (CrN), titanium (Ti), tantalum (Ta), platinum (Pt), scandium (Sc), indium tin oxide (ITO), indium zinc oxide (IZO), etc. The third gate layer 1500 may have a multi-layered structure, e.g., the third gate layer 1500 may include a double-layered structure including Mo/Al or a triple-layered structure including Mo/Al/Mo.

A second interlayer insulating layer 119 (see FIG. 16) may at least partially cover (or overlap) the third gate layer 1500 of FIG. 12. The second interlayer insulating layer 119 may include an insulating material. For example, the second interlayer insulating layer 119 may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, etc.

A first connecting electrode layer 1600 as shown in FIG. 13 may be disposed on the second interlayer insulating layer 119. The first connecting electrode layer 1600 may include a second transfer wiring 1620, a second initialization voltage wiring 1630, a third transfer wiring 1640, a fourth transfer wiring 1650, a fifth transfer wiring 1670, and a sixth transfer wiring 1680.

權(quán)利要求

1
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