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Display apparatus including connecting electrode layer

專利號
US12082461B2
公開日期
2024-09-03
申請人
Samsung Display Co., Ltd.(KR Yongin-si)
發(fā)明人
Seunghwan Cho; Jiryun Park; Seokje Seong; Inhyuck Yeo; Wonsuk Choi; Yoonsun Choi
IPC分類
H01L27/14; G09G3/3283; H10K59/121; H10K59/131; H01L27/12; H01L29/786
技術(shù)領(lǐng)域
wiring,line,connection,layer,may,gate,electrode,first,dv3,dv1
地域: Yongin-si

摘要

A display apparatus includes a first semiconductor layer disposed on a substrate; a first gate layer disposed on the first semiconductor layer, the first gate layer including a driving gate electrode; a second gate layer disposed on the first gate layer, the second gate layer including a capacitor upper electrode; a first connecting electrode layer disposed on the second gate layer, the first connecting electrode layer including a transfer wiring; a second connecting electrode layer disposed on the first connecting electrode layer, the second connecting electrode layer including a horizontal connection wiring extending in a first direction; and a third connecting electrode layer disposed on the second connecting electrode layer, the third connecting electrode layer including a vertical connection wiring extending in a second direction that intersects the first direction.

說明書

The third transfer wiring 1640 may electrically connect the second semiconductor layer 1400 to the first transfer wiring 1540 via contact holes 1640CNT1 and 1640CNT2 formed in a side and another side thereof. The first transfer wiring 1540 is electrically connected to the first gate electrode 1220, e.g., the driving gate electrode, and thus, the third transfer wiring 1640 may electrically connect the first initialization semiconductor layer that is a part of the second semiconductor layer 1400, to the driving gate electrode. The first initialization voltage Vint1 may be transferred to the first gate electrode 1220, e.g., the driving gate electrode, via the second semiconductor layer 1400, the third transfer wiring 1640, and the first transfer wiring 1540.

The fourth transfer wiring 1650 may electrically connect the second semiconductor layer 1400 to the first semiconductor layer 1100 via contact holes 1650CNT1 and 1650CNT2 formed in a side and another side thereof. For example, the fourth transfer wiring 1650 may electrically connect the compensation transistor T3 to the driving transistor T1.

The fifth transfer wiring 1670 may be electrically connected to the first semiconductor layer 1100 via a contact hole 1670CNT. The fifth transfer wiring 1670 may be configured to transfer the driving current or the second initialization voltage Vint2 from the first semiconductor layer 1100 to the organic light-emitting diode OLED.

權(quán)利要求

1
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