The third transfer wiring 1640 may electrically connect the second semiconductor layer 1400 to the first transfer wiring 1540 via contact holes 1640CNT1 and 1640CNT2 formed in a side and another side thereof. The first transfer wiring 1540 is electrically connected to the first gate electrode 1220, e.g., the driving gate electrode, and thus, the third transfer wiring 1640 may electrically connect the first initialization semiconductor layer that is a part of the second semiconductor layer 1400, to the driving gate electrode. The first initialization voltage Vint1 may be transferred to the first gate electrode 1220, e.g., the driving gate electrode, via the second semiconductor layer 1400, the third transfer wiring 1640, and the first transfer wiring 1540.
The fourth transfer wiring 1650 may electrically connect the second semiconductor layer 1400 to the first semiconductor layer 1100 via contact holes 1650CNT1 and 1650CNT2 formed in a side and another side thereof. For example, the fourth transfer wiring 1650 may electrically connect the compensation transistor T3 to the driving transistor T1.
The fifth transfer wiring 1670 may be electrically connected to the first semiconductor layer 1100 via a contact hole 1670CNT. The fifth transfer wiring 1670 may be configured to transfer the driving current or the second initialization voltage Vint2 from the first semiconductor layer 1100 to the organic light-emitting diode OLED.