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Semiconductor devices and data storage systems including the same

專利號
US12096637B2
公開日期
2024-09-17
申請人
Samsung Electronics Co., Ltd.(KR Gyeonggi-do)
發(fā)明人
Kohji Kanamori; Shinhwan Kang; Jeehoon Han
IPC分類
H10B43/50; H10B41/10; H10B41/27; H10B41/41; H10B41/50; H10B43/10; H10B43/27; H10B43/40
技術(shù)領(lǐng)域
separation,channel,may,vs3,structures,structure,upper,vertical,vs2,insulating
地域: Suwon-si

摘要

A semiconductor device includes a substrate; a stack structure on the substrate and including an alternating stack of interlayer insulating layers and gate electrodes; first and second separation regions each extending through the stack structure and extending in a first direction; a first upper separation region between the first and second separation regions and extending through a portion of the stack structure; a plurality of channel structures between the first and second separation regions and extending through the stack structure; and a plurality of first vertical structures each extending through a particular one of the first and second separation regions. Each of the first and second separation regions has a first width in a second direction that is perpendicular to the first direction. Each first vertical structure has a second width in the second direction, the second width being greater than the first width.

說明書

The upper separation regions SS may include a first upper separation region SS1 and a second upper separation region SS2, disposed between the first and second separation regions MS1 and MS2, where the second upper separation region SS2 may be between the first upper separation region SS1 and the second separation region MS2. In FIGS. 2 and 3, the upper separation regions SS are illustrated to include two (2) upper separation regions SS between the first and second separation regions MS1 and MS2, but are not limited thereto, and the number (e.g., quantity) of upper separation regions SS may be variously changed. As illustrated in FIG. 1, the upper separation regions SS may be disposed between the first and second separation regions MS1 and MS2, and may extend in the Y direction. Each of the upper separation regions SS may be arranged in a zigzag shape on a plan view. In some example embodiments, the upper separation regions SS may be arranged in a straight linear shape.

權(quán)利要求

1
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