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Method of making high critical temperature metal nitride layer

專(zhuān)利號(hào)
US12096701B2
公開(kāi)日期
2024-09-17
申請(qǐng)人
Applied Materials, Inc.（US CA Santa Clara）
發(fā)明人
Zihao Yang; Mingwei Zhu; Shriram Mangipudi; Mohammad Kamruzzaman Chowdhury; Shane Lavan; Zhebo Chen; Yong Cao; Nag B. Patibandla
IPC分類(lèi)
H10N60/01
技術(shù)領(lǐng)域
seed,layer,nitride,nbn,metal,oxynitride,snspd,deposition,e.g,can
地域： CA CA Santa Clara

摘要

A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

說(shuō)明書(shū)

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. application Ser. No. 17/178,188, filed Feb. 17, 2021, which claims priority to U.S. Provisional Application No. 62/980,101, filed on Feb. 21, 2020, the entire disclosures of which are incorporated by reference.

BACKGROUND Technical Field

The disclosure concerns use of a seed layer to improve the superconducting critical temperature of a metal nitride layer.

Background Discussion

In the context of superconductivity, the critical temperature (Tc) refers to the temperature below which a material becomes superconductive. Niobium nitride (NbN) is a material that can be used for superconducting applications, e.g., superconducting nanowire single photon detectors (SNSPD) for use in quantum information processing, defect analysis in CMOS, LIDAR, etc. The critical temperature of niobium nitride depends on the crystalline structure and atomic ratio of the material. For example, referring to FIG. 1, cubic 8-phase NbN has some advantages due to its relatively “high” critical temperature, e.g., 9.7-16.5 K (the indicated process temperatures are for a particular fabrication process, and not necessarily applicable other process and deposition chamber designs).

Niobium nitride can be deposited on a workpiece by physical vapor deposition (PVD). For example, a sputtering operation can be performed using a niobium target in the presence of nitrogen gas. The sputtering can be performed by inducing a plasma in the reactor chamber that contains the target and the workpiece.

SUMMARY

權(quán)利要求

1
What is claimed is:1. A method of fabricating a device including a superconductive layer, the method, comprising:depositing a lower seed layer directly on a substrate, the lower seed layer being a nitride of a first metal;depositing an upper seed layer directly on the lower seed layer, the upper seed layer being an oxide or oxynitride of the first metal; anddepositing a metal nitride superconductive layer directly on the upper seed layer, the superconductive layer being a nitride of a different second metal.2. The method of claim 1, wherein the second metal is niobium nitride, titanium nitride, or niobium titanium nitride.3. The method of claim 2, wherein the first metal is aluminum.4. The method of claim 1, wherein the first metal is aluminum.5. The method of claim 1, wherein depositing the upper seed layer comprises depositing a layer having a thickness of 1-3 nm.6. The method of claim 1, wherein the upper seed layer is an oxide of the first metal.7. The method of claim 1, wherein depositing the metal nitride superconductive layer comprises depositing a layer having a thickness of 4 to 50 nm.8. The method of claim 1, wherein depositing the lower seed layer, depositing the upper seed layer, and depositing the metal nitride superconductive layer are performed in a deposition tool without breaking vacuum.9. The method of claim 8, wherein depositing the lower seed layer, depositing the upper seed layer, and depositing the metal nitride superconductive layer comprise physical vapor deposition processes.10. The method of claim 1, wherein depositing the lower seed layer, depositing the upper seed layer, and depositing the metal nitride superconductive layer comprise physical vapor deposition processes.11. A method of fabricating a device including a superconductive layer, the method, comprising:depositing a lower seed layer on a substrate, the lower seed layer being a nitride of a first metal;depositing an upper seed layer directly on the lower seed layer, the upper seed layer being an oxynitride of the first metal; anddepositing a metal nitride superconductive layer directly on the upper seed layer, the superconductive layer being a nitride of a different second metal.12. The method of claim 11, wherein depositing the lower seed layer comprises depositing a layer having a thickness of 3 to 50 nm.13. A method of fabricating a device including a superconductive layer, the method, comprising:depositing a lower seed layer on a substrate, the lower seed layer being a nitride of a first metal;depositing an upper seed layer directly on the lower seed layer, the upper seed layer being an oxide or oxynitride of the first metal; anddepositing a metal nitride superconductive layer directly on the upper seed layer, the superconductive layer being a nitride of a different second metal, the metal nitride superconductive layer being a lowermost superconductive layer in the device.14. The method of claim 13, wherein depositing the upper seed layer is by physical vapor deposition.15. The method of claim 13, further comprising switching a target of a deposition chamber, in which depositing both the upper seed layer and the lower seed layer are performed.16. The method of claim 13, wherein a thickness of the upper seed layer is 1-2 nm.
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