Memory devices with dual encapsulation layers and methods of fabrication
摘要
說明書
The conductive interconnect 102, memory device 108 and the electrode structure 112 each have a lateral thickness WCI, WMD, and WES, respectively. In general, the lateral thicknesses WCI, WMD, and WES can be independent of each other. In particular, WCI can depend on a shape of the conductive interconnect 102. In the illustrative embodiment, WES is greater than WCI and WMD. In some embodiments, such as is illustrated electrode structure 112 is wider than the memory device 108, as shown in the Figure. A WES that is greater than WCI or WCI and WMD, may determine material choices for the electrode structure 112 as well as for conductive interconnect 102. For example, when WES is greater than WMD, electrode structure 112 may not include a material such as copper to prevent sputtering of the electrode structure 112 during fabrication of the memory device 108.
However, conductive interconnect 102 and the electrode structure 112 can have a variety of plan view shapes as will be discussed below. The relative shapes of the electrode structure 112 and conductive interconnect 102 can determine relative alignment between sidewalls 112A and 102A.
