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Memory devices with dual encapsulation layers and methods of fabrication

專利號
US12108608B1
公開日期
2024-10-01
申請人
Kepler Computing Inc.(US CA San Francisco)
發(fā)明人
Noriyuki Sato; Debraj Guhabiswas; Tanay Gosavi; Niloy Mukherjee; Amrita Mathuriya; Sasikanth Manipatruni
IPC分類
H10B53/30; H01L49/02
技術(shù)領(lǐng)域
etch,electrode,in,conductive,memory,layer,sidewall,dielectric,device,structure
地域: CA CA San Francisco

摘要

An integration process including an etch stop layer for high density memory and logic applications and methods of fabrication are described. While various examples are described with reference to FeRAM, capacitive structures formed herein can be used for any application where a capacitor is desired. For instance, the capacitive structure can be used for fabricating ferroelectric based or paraelectric based majority gate, minority gate, and/or threshold gate.

說明書

Referring again to FIG. 1A, conductive interconnect 118 has one or more properties of conductive interconnect 102. Conductive interconnects 102 and 118 include a metal such as copper, cobalt, molybdenum, tungsten, or ruthenium. In some embodiments, conductive interconnects 102 and 118 include a liner layer and a fill metal on the liner layer. For example, the liner layer may include a material, such as but not limited to, ruthenium, cobalt or tantalum and the fill metal may include copper or tungsten. Conductive interconnects 102 and 118 have a thickness that spans a portion of dielectric 136 within level 104. There may be other vias and interconnect routing connections within level 104 that are not shown in the Figure. In an embodiment, via electrode 116, via 124, metal lines 120 and 122, include a same or substantially the same material. In some embodiments, via electrode 116, via 124, metal lines 120 and 122, include a same or substantially the same material as the material of the conductive interconnect 102. In different embodiments, via electrode 116, via 124, conductive interconnects 102 and 118 may be discrete vias or continuous trenches, as will be discussed further below.

權(quán)利要求

1
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