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Display substrate including light shielding layer having multiple imaging pinholes formed therein and method for manufacturing the same, display panel and display device

專利號
US12133427B2
公開日期
2024-10-29
申請人
Beijing BOE Technology Development Co., Ltd.; BOE Technology Group Co., Ltd.(CN Beijing CN Beijing)
發(fā)明人
Chen Xu
IPC分類
H10K59/126; G06V40/13; H10K59/12; H10K59/65
技術(shù)領(lǐng)域
layer,transistor,electrode,projection,pattern,drain,substrate,pixel,in,shielding
地域: Beijing

摘要

A display substrate, a manufacturing method thereof, a display panel and a display device are provided. The display substrate includes: an array layer on a base substrate and a light shielding layer on a side of the array layer away from the base substrate, wherein the array layer includes a driving transistor and a switching transistor, the switching transistor is a transistor connected to a gate electrode of the driving transistor, a plurality of imaging pinholes are formed in the light shielding layer, and a first orthographic projection of the imaging pinholes onto the base substrate and a second orthographic projection of an active layer pattern of the switching transistor in the array layer onto the base substrate do not overlap at least in part.

說明書

In embodiments of the present disclosure, T6 may be a double-gate transistor to reduce its leakage current and adequately maintain the potential of the gate electrode of T1, but the present disclosure is not limited to this.

FIG. 2 is an operating timing diagram of the example of the pixel driving circuit shown in FIG. 1, in which t1 is a first stage, t2 is a second stage, t3 is a third stage, and the data voltage provided by the data line Data(n) the data voltage is labeled as Vdata.

As shown in FIG. 2, when the example of the pixel driving circuit shown in FIG. 1 is in operation,

    • in the first stage t1 (i.e. a reset stage), Reset(n) inputs a low electrical level, G(n) inputs a high electrical level, EM(n) inputs a high electrical level, T6 is on, and the potential of the gate electrode of T1 is reset to the initial voltage;

權(quán)利要求

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