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Display substrate including light shielding layer having multiple imaging pinholes formed therein and method for manufacturing the same, display panel and display device

專利號(hào)
US12133427B2
公開日期
2024-10-29
申請(qǐng)人
Beijing BOE Technology Development Co., Ltd.; BOE Technology Group Co., Ltd.(CN Beijing CN Beijing)
發(fā)明人
Chen Xu
IPC分類
H10K59/126; G06V40/13; H10K59/12; H10K59/65
技術(shù)領(lǐng)域
layer,transistor,electrode,projection,pattern,drain,substrate,pixel,in,shielding
地域: Beijing

摘要

A display substrate, a manufacturing method thereof, a display panel and a display device are provided. The display substrate includes: an array layer on a base substrate and a light shielding layer on a side of the array layer away from the base substrate, wherein the array layer includes a driving transistor and a switching transistor, the switching transistor is a transistor connected to a gate electrode of the driving transistor, a plurality of imaging pinholes are formed in the light shielding layer, and a first orthographic projection of the imaging pinholes onto the base substrate and a second orthographic projection of an active layer pattern of the switching transistor in the array layer onto the base substrate do not overlap at least in part.

說明書

  • forming a light-shielding layer on a side of the array layer away from the base substrate; forming a plurality of imaging pinholes in the light-shielding layer; wherein a first orthographic projection of the imaging pinholes onto the base substrate and a second orthographic projection of an active layer pattern of the switching transistor in the array layer onto the base substrate do not overlap at least in part.
  • In the manufacturing method of display panel according to the embodiment of the present disclosure, the imaging pinholes formed in the light shielding layer are arranged to not correspond to the active layer pattern of the switching transistor in the array layer, so that the light passing through the imaging pinholes will not affect the active layer pattern of the switching transistor, and the switching transistor in off state will not have photo-generated leakage current due to the irradiation of light, thereby not affecting the potential of the gate electrode of the driving transistor, and avoiding the problem of inaccurate display grayscale.

    In a specific implementation, the step of providing an array layer on the base substrate may include: sequentially providing an active layer, a gate insulating layer, a first gate metal layer, a first insulating layer, a second gate metal layer, an interlayer dielectric layer, a first source-drain metal layer, and a second insulating layer on the base substrate; forming a first via hole that penetrates the second insulating layer; the method for manufacturing the display substrate further includes:

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