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Magnetoresistive random access memory and method of manufacturing the same

專利號
US12133474B2
公開日期
2024-10-29
申請人
UNITED MICROELECTRONICS CORP.（TW Hsin-Chu）
發(fā)明人
Hui-Lin Wang; Chen-Yi Weng; Chin-Yang Hsieh; Yi-Hui Lee; Ying-Cheng Liu; Yi-An Shih; Jing-Yin Jhang; I-Ming Tseng; Yu-Ping Wang; Chien-Ting Lin; Kun-Chen Ho; Yi-Syun Chou; Chang-Min Li; Yi-Wei Tseng; Yu-Tsung Lai; Jun Xie
IPC分類
H10N50/80; H10B61/00; H10N50/01
技術領域
layer,electrode,tunnel,junction,nitride,stack,mram,top,titanium,magnetic
地域： Hsin-Chu

摘要

A method of fabricating magnetoresistive random access memory, including providing a substrate, forming a bottom electrode layer, a magnetic tunnel junction stack, a top electrode layer and a hard mask layer sequentially on the substrate, wherein a material of the top electrode layer is titanium nitride, a material of the hard mask layer is tantalum or tantalum nitride, and a percentage of nitrogen in the titanium nitride gradually decreases from a top surface of top electrode layer to a bottom surface of top electrode layer, and patterning the bottom electrode layer, the magnetic tunnel junction stack, the top electrode layer and the hard mask layer into multiple magnetoresistive random access memory cells.

說明書

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CROSS REFERENCE TO RELATED APPLICATIONS

This application is a division of U.S. application Ser. No. 17/835,986, filed on Jun. 9, 2022, which is a continuation application of U.S. application Ser. No. 17/131,767, filed on Dec. 23, 2020, which is a division of U.S. application Ser. No. 16/531,129, filed on Aug. 5, 2019. The contents of these applications are incorporated herein by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention generally relates to a magnetoresistive random access memory, and more specifically, to a magnetoresistive random access memory with particular composition of top electrode.

2. Description of the Prior Art

Magnetoresistance (MR) effect has been known as a kind of effect caused by altering the resistance of a material through variation of outside magnetic field. The physical definition of such effect is defined as a variation in resistance obtained by dividing a difference in resistance under no magnetic interference by the original resistance. Currently, MR effect has been successfully utilized in production of hard disks thereby having important commercial values. Moreover, the characterization of utilizing GMR materials to generate different resistance under different magnetized states could also be used to fabricate magnetoresistive random access memory (MRAM) devices, which typically has the advantage of keeping stored data even when the device is not connected to an electrical source.

權利要求

1
What is claimed is:1. A method of fabricating magnetoresistive random access memory, comprising:providing a substrate;forming a bottom electrode layer, a magnetic tunnel junction stack, a top electrode layer and a hard mask layer sequentially on said substrate, wherein a material of said top electrode layer is titanium nitride, a material of said hard mask layer is tantalum or tantalum nitride, and a percentage of nitrogen in said titanium nitride gradually decreases from a top surface of top electrode layer to a bottom surface of top electrode layer; andpatterning said bottom electrode layer, said magnetic tunnel junction stack, said top electrode layer and said hard mask layer into multiple magnetoresistive random access memory cells.2. The method of fabricating magnetoresistive random access memory of claim 1, wherein said percentage of nitrogen in said titanium nitride is greater than 0% and less than 50%.3. The method of fabricating magnetoresistive random access memory of claim 1, further comprising an etch stop layer disposed between said top electrode layer and said magnetic tunnel junction, wherein a material of said etch stop layer comprises ruthenium or ruthenium oxide.4. The method of fabricating magnetoresistive random access memory of claim 3, wherein said etch stop layer is a layer stack of alternating ruthenium layers and ruthenium oxide layers.5. The method of fabricating magnetoresistive random access memory of claim 1, wherein said magnetic tunnel junction layer comprises seed layer, pinned layer, reference layer, tunneling barrier layer, free layer, and metal spacer.
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