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Integrated assemblies having body contact regions proximate transistor body regions; and methods utilizing bowl etches during fabrication of integrated assemblies

專利號
US12137551B2
公開日期
2024-11-05
申請人
Micron Technology, Inc.(US ID Boise)
發(fā)明人
Werner Juengling
IPC分類
H10B12/00; H01L21/308; H01L21/762
技術領域
insulative,regions,posts,trenches,material,bowl,doped,may,dopant,be
地域: ID ID Boise

摘要

Some embodiments include an integrated assembly having a semiconductor-containing structure with a body region vertically between an upper region and a lower region. The upper region includes a first source/drain region. The lower region is split into two legs which are both joined to the body region. One of the legs includes a second source/drain region and the other of the legs includes a body contact region. The first and second source/drain regions are of a first conductivity type, and the body contact region is of a second conductivity type which is opposite to the first conductivity type. An insulative material is adjacent to the body region. A conductive gate is adjacent to the insulative material. A transistor includes the semiconductor-containing structure, the conductive gate and the insulative material. Some embodiments include methods of forming integrated assemblies.

說明書

Referring to FIGS. 22 and 22A, insulative material 46 is formed within the trenches 112, and conductive gate material 50 is formed over the insulative material. The insulative material 46 may be referred to as second insulative material to distinguish it from the first insulative material 72. The insulative material 46 and conductive material 50 may be considered to be formed adjacent sides of the first and second posts 88 and 90; with the conductive material 50 being spaced from such sides by the insulative material 46. In some embodiments, the conductive material 50 may be considered to be configured as a line extending along the cross-section of FIG. 22, and extending across the first and second posts 88 and 90.

Referring to FIGS. 23 and 23A, upper surfaces of the insulative material 46 and conductive material 50 are recessed, and the insulative material 44 is formed over the recessed upper surfaces. The recessing of the conductive material 50 patterns such material into gates 48. One of the gates 48 is diagrammatically illustrated in FIG. 23. However, such gate is out of the plane relative to the cross-section of FIG. 23, and accordingly is shown in dashed-line view.

權利要求

1
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