The doping of the fourth regions 110 may comprise implanting of dopant into the fourth regions 110 and/or may comprise out-diffusion of dopant from the digit line material 116. If the dopant is implanted into the fourth regions 110, the remainder of assembly 10a may be protected with a mask (not shown) so that the dopant is only implanted into the fourth regions 110. If the dopant is provided into the fourth regions 110 utilizing out-diffusion from the digit line material 116, the material 116 may be provided to have a lower portion comprising doped silicon (in some embodiments, the digit line material 116 may comprise one or more metal-containing materials over the doped silicon). After the material 116 is patterned into the digit lines, thermal processing may be utilized to out-diffuse the dopant from the doped silicon of the material 116 and into the fourth regions 110.

Referring to FIG. 25, the third regions 108 of the semiconductor posts 88 are doped to a conductivity type (shown as p-type), and body contact structures 118 are formed over the third regions and electrically coupled with the third regions. The doped portions of the third regions 108 correspond to the body contact regions 36 described above with reference to FIG. 4.