The body contact regions 36 have an opposite type conductivity relative to the source/drain regions 20. In some embodiments, the conductivity type of the body contact regions 36 may referred to as a first conductivity type, and the conductivity type of the source/drain regions 20 may be referred to as a second conductivity type. In the shown embodiment, the first conductivity type is p-type and the second conductivity type is n-type. In other embodiments, the first conductivity type may be n-type and the second conductivity type may be p-type.

In some embodiments, the formation of the doped regions 20 and 36 within the semiconductor posts 88 may be considered to correspond to forming of such doped regions within the upper (first) regions 94 of the posts 88; with such upper regions being shown in FIG. 17.

The body contact structures 118 comprise a material 120. Such material may comprise any suitable electrically conductive composition(s); such as, for example, one or more of various metals (e.g., titanium, tungsten, cobalt, nickel, platinum, ruthenium, etc.), metal-containing compositions (e.g., metal silicide, metal nitride, metal carbide, etc.), and/or conductively-doped semiconductor materials (e.g., conductively-doped silicon, conductively-doped germanium, etc.).