The dopant provided within the source/drain regions 18 is the same type as the dopant provided within the source/drain regions 20, and in the shown embodiment is n-type. The semiconductor structures 24 of FIGS. 29 and 29A are analogous to those described above with reference to FIGS. 4 and 4A; and comprise the source/drain regions 18 and 20, the body contact regions 36, and the body regions 22.

Referring to FIG. 30, charge-storage devices 52 are coupled with the source/drain regions 18 (i.e., are coupled with the second regions 96 of the semiconductor posts 88). The charge-storage devices 52 may comprise capacitors in some example embodiments.

The assemblies and structures discussed above may be utilized within integrated circuits (with the term “integrated circuit” meaning an electronic circuit supported by a semiconductor substrate); and may be incorporated into electronic systems. Such electronic systems may be used in, for example, memory modules, device drivers, power modules, communication modems, processor modules, and application-specific modules, and may include multilayer, multichip modules. The electronic systems may be any of a broad range of systems, such as, for example, cameras, wireless devices, displays, chip sets, set top boxes, games, lighting, vehicles, clocks, televisions, cell phones, personal computers, automobiles, industrial control systems, aircraft, etc.