In some embodiments, a process for partially forming the interconnect structure 706 comprises: 1) depositing the ILD layer 708ild; 2) forming the contact via 506 in the ILD layer 708ild; 3) depositing the IMD layer 708imd; and 4) forming the plurality of lower-level wires 508 in the IMD layer 708imd. The depositing of the ILD and IMD layers 708ild, 708imd may, for example, be performed by CVD, PVD, some other suitable deposition process, or any combination of the foregoing. The forming of the contact via 506 and the forming of the lower-level wires 508 may, for example, be performed by a single damascene process or some other suitable process. The single damascene process comprises: 1) patterning a dielectric layer (e.g., the ILD layer 708ild or the IMD layer 708imd) to form openings with a layout of conductive features being formed (e.g., the contact via 506 or the plurality of lower-level wires 508); 2) depositing a conductive layer filling the openings and covering the dielectric layer; and 3) performing a planarization into the conductive layer until the dielectric layer is reached. The patterning may, for example, be performed by a photolithography/etching process or some other suitable patterning process. The depositing of the conductive layer may, for example, be performed by CVD, PVD, electroless plating, electroplating, some other suitable deposition process, or any combination of the foregoing. The planarization may, for example, be performed by a chemical mechanical polish (CMP) or some other suitable planarization process.