Organic electroluminescence device and electronic appliance using the same
摘要
說(shuō)明書
The glass substrate with the transparent electrode after being cleaned was mounted onto a substrate holder in a vacuum vapor deposition apparatus. First, a compound HI was deposited on a surface on the side on which the transparent electrode was formed so as to cover the transparent electrode to form an HI film having a thickness of 5 nm. The HI film functions as a hole-injecting layer.
Subsequent to the formation of the HI film, a compound HT1 was deposited thereon to form an HT1 film having a thickness of 80 nm on the HI film. The HT1 film functions as a hole-transporting layer (first hole-transporting layer).
Subsequent to the formation of the HT1 film, a compound HT2 was deposited thereon to form an HT2 film having a thickness of 10 nm on the HT1 film. The HT2 film functions as an electron-blocking layer (second hole-transporting layer).
A compound BH-1 (host material) and a compound BD-1 (dopant material) were co-deposited on the HT2 film to be 2 mass % in a proportion of the compound BD-1 to form a BH-1:BD-1 film having a thickness of 25 nm. The BH-1:BD-1 film functions as an emitting layer.
A compound HB was deposited on this emitting layer to form an HB film having a thickness of 10 nm. The HB film functions as a hole barrier layer.
A compound ET was deposited on the HB film to form an ET film having a thickness of 15 nm. The ET film functions as an electron-transporting layer. LiF was deposited on the ET film to form a LiF film having a thickness of 1 nm. Al metal was deposited on the LiF film to form a metal cathode having a thickness of 80 nm, thereby an organic EL device was fabricated.
The layer configuration of the obtained organic EL device is as follows. ITO(130)/HI(5)/HT1(80)/HT2(10)BH-1:BD-1(25:2 mass %)/HB(10)/ET(15)/LiF(1)/Al(80)
