The oxide superconductor of the second embodiment is a superconducting resonator 200. The superconducting resonator 200 has a microstrip line structure. For example, a superconducting filter can be formed by combining a plurality of superconducting resonators 200.
The superconducting resonator 200 includes a substrate 46, a lower intermediate layer 47, a lower oxide superconducting layer 48, an upper intermediate layer 49, and an upper oxide superconducting layer 50. The lower intermediate layer 47 is provided between the substrate 46 and the lower oxide superconducting layer 48. The upper intermediate layer 49 is provided between the substrate 46 and the upper oxide superconducting layer 50. The lower intermediate layer 47 and the upper intermediate layer 49 are, for example, CeO2.
The substrate 46 is provided between the upper oxide superconducting layer 50 and the lower oxide superconducting layer 48. The substrate 46 is, for example, a sapphire substrate.
The upper oxide superconducting layer 50 includes a first superconducting region 51a, a second superconducting region 51b, a third superconducting region 51c, a first non-superconducting region 52a, and a second non-superconducting region 52b. The first non-superconducting region 52a is an example of a non-superconducting region.