Magnetic random access memory and manufacturing method thereof
地域：
Hsinchu
摘要
In a method of manufacturing a semiconductor device, a magnetic random access memory (MRAM) cell structure is formed. The MRAM cell structure includes a bottom electrode, a magnetic tunnel junction (MTJ) stack and a top electrode. A first insulating cover layer is formed over the MRAM cell structure. A second insulating cover layer is formed over the first insulating cover layer. An interlayer dielectric (ILD) layer is formed. A contact opening in the ILD layer is formed, thereby exposing the second insulating cover layer. A part of the second insulating cover layer and a part of the first insulating cover layer are removed, thereby exposing the top electrode. A conductive layer is formed in the opening contacting the top electrode.
說明書
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
This application is a continuation of U.S. patent application Ser. No. 17/537,119 filed Nov. 29, 2021, which is a divisional of U.S. patent application Ser. No. 15/966,639 filed Apr. 30, 2018, now U.S. Pat. No. 11,189,658, which claims priority to U.S. Provisional Application No. 62/590,136 filed on Nov. 22, 2017, the entire contents of each of which are incorporated herein by reference.
The present disclosure relates to a magnetic random access memory (MRAM) device and, more particularly, to an MRAM device based on a magnetic tunnel junction cell formed with a semiconductor device.
An MRAM offers comparable performance to volatile static random access memory (SRAM) and comparable density with lower power consumption to volatile dynamic random access memory (DRAM). Compared to non-volatile memory (NVM) flash memory, an MRAM offers much faster access times and suffers minimal degradation over time, whereas a flash memory can only be rewritten a limited number of times. An MRAM cell is formed by a magnetic tunneling junction (MTJ) comprising two ferromagnetic layers which are separated by a thin insulating barrier, and operates by tunneling of electrons between the two ferromagnetic layers through the insulating barrier.
權(quán)利要求
What is claimed is:1. A semiconductor device including a magnetic random access memory (MRAM) cell, comprising:an MRAM cell structure disposed over a substrate, the MRAM cell structure including a bottom electrode, a magnetic tunnel junction (MTJ) stack and a top electrode; a first insulating layer disposed over the MRAM cell structure; a first interlayer dielectric (ILD) layer disposed over the first insulating layer; a second ILD layer disposed over the first ILD layer; and a conductive contact in contact with the top electrode, wherein a side face of the conductive contact includes a lateral protrusion, wherein the second ILD layer includes a first dielectric layer, a second dielectric layer on the first dielectric layer and a third dielectric layer on the second dielectric layer, and wherein the lateral protrusion protrudes into the first dielectric layer. 2. The semiconductor device of claim 1 , wherein the lateral protrusion is located below an interface between the first ILD layer and the second ILD layer. 3. The semiconductor device of claim 2 , wherein the first insulating layer is made of one or more selected from the group consisting of aluminum carbide and aluminum oxycarbide. 4. The semiconductor device of claim 3 , further comprising a second insulating layer made of a nitride-based insulating material,wherein the second insulating layer covers sidewalls of the MRAM cell structure. 5. The semiconductor device of claim 4 , wherein the nitride-based insulating material is one or more selected from the group consisting of SiON and SiOCN. 6. The semiconductor device of claim 4 , wherein the first insulting layer is thinner than the second insulting layer. 7. The semiconductor device of claim 1 , wherein:the conductive contact passes through the first, second and third dielectric layers. 8. The semiconductor device of claim 7 , wherein:the first dielectric layer, the second dielectric layer and the third dielectric layer are made of different materials from each other, and one of the first or second dielectric layers includes SiC, SiCN or SiOCN. 9. The semiconductor device of claim 7 , further comprising a second insulting layer made of a nitride-based insulating material,wherein the insulating layer covers sidewalls of the MRAM cell structure. 10. The semiconductor device of claim 9 , wherein the nitride-based insulating material is one or more selected from the group consisting of SiON and SiOCN. 11. The semiconductor device of claim 9 , wherein the first insulting layer is thinner than the second insulting layer. 12. The semiconductor device of claim 7 , wherein the first insulating layer is made of one or more selected from the group consisting of aluminum carbide and aluminum oxycarbide. 13. The semiconductor device of claim 12 , wherein a concentration of at least one of Al, O, or C in the first insulating layer in a thickness direction is not uniform. 14. A semiconductor device including a magnetic random access memory (MRAM) cell, comprising:an MRAM cell structure disposed over a substrate, the MRAM cell structure including a bottom electrode, a magnetic tunnel junction (MTJ) stack and a top electrode; a first insulating layer disposed over and in contact with sidewalls of the MRAM cell structure; a second insulating layer made of a different material than the first insulating layer and disposed over the first insulating layer; a first interlayer dielectric (ILD) layer disposed over the second insulating layer; a second ILD layer disposed over the first ILD layer; and a conductive contact in contact with the top electrode, wherein a top of the second insulating layer is located above a top of the first insulating layer. 15. The semiconductor device of claim 14 , wherein the top of the second insulating layer is located above a top of the top electrode. 16. The semiconductor device of claim 14 , wherein the top of the second insulating layer is located below a top of the top electrode. 17. The semiconductor device of claim 14 , wherein:the first insulating layer is made of a nitride-based insulating material, and the second insulating layer is made of one or more selected from the group consisting of aluminum carbide and aluminum oxycarbide. 18. A semiconductor device including a magnetic random access memory (MRAM) cell, comprising:an MRAM cell structure disposed over a substrate, the MRAM cell structure including a bottom electrode, a magnetic tunnel junction (MTJ) stack and a top electrode; a first insulating layer disposed over sidewalls of the MRAM cell structure; a second insulating layer made of a different material than the first insulating layer and disposed over the first insulating layer; a first interlayer dielectric (ILD) layer disposed over the second insulating layer; a second ILD layer disposed over the first ILD layer; and a conductive contact in contact with the top electrode, wherein a top of the second insulating layer is located below a top of the first insulating layer. 19. The semiconductor device of claim 18 , wherein the top of the second insulating layer is located below a top of the top electrode. 20. The semiconductor device of claim 18 , wherein:the first insulating layer is made of a nitride-based insulating material, and the second insulating layer is made of one or more selected from the group consisting of aluminum carbide and aluminum oxycarbide.
意見反饋
使用該功能遇到問題