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Magnetic random access memory and manufacturing method thereof

專利號(hào)
US12178051B2
公開日期
2024-12-24
申請(qǐng)人
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.（TW Hsinchu）
發(fā)明人
Hui-Hsien Wei; Chung-Te Lin; Han-Ting Tsai; Tai-Yen Peng; Yu-Teng Dai; Chien-Min Lee; Sheng-Chih Lai; Wei-Chih Wen
IPC分類
H10B61/00; B82Y25/00; G11C11/16; H01F41/30; H10N50/01; H10N50/10; H10N50/80; H10N50/85
技術(shù)領(lǐng)域
layer,insulating,mtj,mram,ild,cover,in,electrode,nm,dielectric
地域： Hsinchu

摘要

In a method of manufacturing a semiconductor device, a magnetic random access memory (MRAM) cell structure is formed. The MRAM cell structure includes a bottom electrode, a magnetic tunnel junction (MTJ) stack and a top electrode. A first insulating cover layer is formed over the MRAM cell structure. A second insulating cover layer is formed over the first insulating cover layer. An interlayer dielectric (ILD) layer is formed. A contact opening in the ILD layer is formed, thereby exposing the second insulating cover layer. A part of the second insulating cover layer and a part of the first insulating cover layer are removed, thereby exposing the top electrode. A conductive layer is formed in the opening contacting the top electrode.

說(shuō)明書

FIGS. 12A and 12B show various stages of a sequential manufacturing process of the semiconductor device including an MRAM according to another embodiment of the present disclosure. Material, configuration, dimensions and/or processes the same as or similar to the foregoing embodiments described with FIGS. 1A-11B may be employed in the following embodiments, and detailed explanation thereof may be omitted.

權(quán)利要求

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