白丝美女被狂躁免费视频网站,500av导航大全精品,yw.193.cnc爆乳尤物未满,97se亚洲综合色区,аⅴ天堂中文在线网官网

Magnetic random access memory and manufacturing method thereof

專利號
US12178051B2
公開日期
2024-12-24
申請人
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.（TW Hsinchu）
發(fā)明人
Hui-Hsien Wei; Chung-Te Lin; Han-Ting Tsai; Tai-Yen Peng; Yu-Teng Dai; Chien-Min Lee; Sheng-Chih Lai; Wei-Chih Wen
IPC分類
H10B61/00; B82Y25/00; G11C11/16; H01F41/30; H10N50/01; H10N50/10; H10N50/80; H10N50/85
技術(shù)領(lǐng)域
layer,insulating,mtj,mram,ild,cover,in,electrode,nm,dielectric
地域： Hsinchu

摘要

In a method of manufacturing a semiconductor device, a magnetic random access memory (MRAM) cell structure is formed. The MRAM cell structure includes a bottom electrode, a magnetic tunnel junction (MTJ) stack and a top electrode. A first insulating cover layer is formed over the MRAM cell structure. A second insulating cover layer is formed over the first insulating cover layer. An interlayer dielectric (ILD) layer is formed. A contact opening in the ILD layer is formed, thereby exposing the second insulating cover layer. A part of the second insulating cover layer and a part of the first insulating cover layer are removed, thereby exposing the top electrode. A conductive layer is formed in the opening contacting the top electrode.

說明書

FIGS. 13A and 13B show various stages of a sequential manufacturing process of the semiconductor device including an MRAM according to another embodiment of the present disclosure. Material, configuration, dimensions and/or processes the same as or similar to the foregoing embodiments described with FIGS. 1A-12B may be employed in the following embodiments, and detailed explanation thereof may be omitted.

Similar to FIGS. 12A and 12B, in the embodiments shown by FIGS. 13A and 13B, the upper surface of the top electrode 256 is not flush with at least one of the upper surfaces of the first insulating cover layer 227 and the second insulating cover layer 280.

權(quán)利要求

1
微信群二維碼
意見反饋