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Magnetic random access memory and manufacturing method thereof

專利號(hào)
US12178051B2
公開日期
2024-12-24
申請(qǐng)人
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.(TW Hsinchu)
發(fā)明人
Hui-Hsien Wei; Chung-Te Lin; Han-Ting Tsai; Tai-Yen Peng; Yu-Teng Dai; Chien-Min Lee; Sheng-Chih Lai; Wei-Chih Wen
IPC分類
H10B61/00; B82Y25/00; G11C11/16; H01F41/30; H10N50/01; H10N50/10; H10N50/80; H10N50/85
技術(shù)領(lǐng)域
layer,insulating,mtj,mram,ild,cover,in,electrode,nm,dielectric
地域: Hsinchu

摘要

In a method of manufacturing a semiconductor device, a magnetic random access memory (MRAM) cell structure is formed. The MRAM cell structure includes a bottom electrode, a magnetic tunnel junction (MTJ) stack and a top electrode. A first insulating cover layer is formed over the MRAM cell structure. A second insulating cover layer is formed over the first insulating cover layer. An interlayer dielectric (ILD) layer is formed. A contact opening in the ILD layer is formed, thereby exposing the second insulating cover layer. A part of the second insulating cover layer and a part of the first insulating cover layer are removed, thereby exposing the top electrode. A conductive layer is formed in the opening contacting the top electrode.

說明書

Further, spatially relative terms, such as “beneath,” “below,” “l(fā)ower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly. In addition, the term “made of” may mean either “comprising” or “consisting of.” Further, in the following fabrication process, there may be one or more additional operations in/between the described operations, and the order of operations may be changed. In the present disclosure, a phrase “one of A, B and C” means “A, B and/or C” (A, B, C, A and B, A and C, B and C, or A, B and C), and does not mean one element from A, one element from B and one element from C, unless otherwise described.

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