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Light emitting device and electronic equipment including a light reflection layer, an insulation layer, and a plurality of pixel electrodes

專利號
US12178080B2
公開日期
2024-12-24
申請人
SEIKO EPSON CORPORATION(JP Tokyo)
發(fā)明人
Takeshi Koshihara; Ryoichi Nozawa
IPC分類
H10K59/121; H10K50/00; H10K50/805; H10K50/818; H10K50/824; H10K50/852; H10K50/856; H10K59/12; H10K59/123; H10K59/124; H10K59/126; H10K59/30; H10K59/35; H10K59/38; H10K102/00
技術(shù)領(lǐng)域
insulation,electrode,pixel,film,light,layer,emission,emitting,in,relay
地域: Tokyo

摘要

A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer thickness part, and a third layer thickness part, a pixel electrode that is provided on the first insulation layer, a second insulation layer that covers a peripheral section of the pixel electrode, a light emission functional layer, a facing electrode, and a conductive layer that is provided on the first layer thickness part. The pixel electrode includes a first pixel electrode which is provided in the first layer thickness part, a second pixel electrode which is provided in the second layer thickness part, and a third pixel electrode which is provided in the third layer thickness part. The first pixel electrode, the second pixel electrode, and the third pixel electrode are connected to the transistor through the conductive layer.

說明書

This is a Continuation of U.S. patent application Ser. No. 17/749,757, filed May 20, 2022, which is a Continuation of application Ser. No. 16/891,482 filed Jun. 3, 2020, which is a Continuation of application Ser. No. 16/057,026 filed Aug. 7, 2018, which is a Continuation of application Ser. No. 15/233,424 filed Aug. 10, 2016, which is a Continuation of application Ser. No. 14/823,656 filed Aug. 11, 2015, which is a Divisional of application Ser. No. 14/455,566 filed Aug. 8, 2014, which claims the benefit of Japanese Application No. 2013-175339 filed Aug. 27, 2013. The disclosures of the aforementioned prior applications are hereby incorporated by reference herein in their entirety.

BACKGROUND 1. Technical Field

The present invention relates to a light emitting device, a method of manufacturing the light emitting device, and electronic equipment in which the light emitting device is mounted.

2. Related Art

As an example of a light emitting device, for example, an electro-optic device, in which organic Electroluminescent (hereinafter, referred to as an organic EL) elements are arranged in a matrix shape (JP-A-2009-134067), has been proposed. The electro-optic device disclosed in JP-A-2009-134067 is an active matrix type light emitting device which includes a thin film transistor and in which pixels for emitting light are arranged in a matrix shape. In the pixels, a light reflection layer, a translucent insulation film, a first electrode (pixel electrode), a barrier layer, a light emission functional layer, and a second electrode (facing electrode) are sequentially laminated.

權(quán)利要求

1
What is claimed is:1. A light emitting device comprising:a first transistor;a second transistor;a third transistor;an electrode having light reflexivity and optical transparency;a light reflection layer being provided between the first transistor and the electrode, between the second transistor and the electrode, and between the third transistor and the electrode;a first pixel electrode having optical transparency and being provided between the electrode and the light reflection layer;a second pixel electrode having optical transparency and being provided between the electrode and the light reflection layer;a third pixel electrode having optical transparency and being provided between the electrode and the light reflection layer;a first insulation layer including a first layer thickness part being provided between the first pixel electrode and the light reflection layer, a second layer thickness part being thicker than the first layer thickness part and being provided between the second pixel electrode and the light reflection layer, and a third layer thickness part being thicker than the second layer thickness part and being provided between the third pixel electrode and the light reflection layer;a light emission functional layer being provided between the electrode and the first pixel electrode, between the electrode and the second pixel electrode, and between the electrode and the third pixel electrode;a first conductive layer overlapping with the first layer thickness part in plan view, and including at least a part which overlaps with the first pixel electrode in plan view;a second conductive layer overlapping with the second layer thickness part in plan view, and including at least a part which overlaps with the second pixel electrode in plan view; anda third conductive layer overlapping with the third layer thickness part in plan view, and including at least a part which overlaps with the third pixel electrode in plan view, whereinthe first pixel electrode is electrically connected to the first transistor via the first conductive layer,the second pixel electrode is electrically connected to the second transistor via the second conductive layer, andthe third pixel electrode is electrically connected to the third transistor via the third conductive layer.2. The light emitting device according to claim 1, whereinthe first pixel electrode, the second pixel electrode, and the third pixel electrode are arranged along a first direction, andthe first layer thickness part and the second layer thickness part are formed in a rectangular shape which is extended along a second direction crossing the first direction in plan view.3. Electronic equipment comprising the light emitting device according to claim 2.4. The light emitting device according to claim 1, whereinthe light reflection layer includes a first opening portion overlapping with the first conductive layer in plan view, a second opening portion overlapping with the second conductive layer in plan view, and a third opening portion overlapping with the third conductive layer in plan view,the first pixel electrode is electrically connected to the first transistor via a first relay electrode that is provided in the first opening portion,the second pixel electrode is electrically connected to the second transistor via a second relay electrode that is provided in the second opening portion, andthe third pixel electrode is electrically connected to the third transistor via a third relay electrode that is provided in the third opening portion.5. The light emitting device according to claim 4, whereinthe first relay electrode overlaps with the first transistor in plan view,the second relay electrode overlaps with the second transistor in plan view, andthe third relay electrode overlaps with the third transistor in plan view.6. Electronic equipment comprising the light emitting device according to claim 5.7. Electronic equipment comprising the light emitting device according to claim 4.8. Electronic equipment comprising the light emitting device according to claim 1.
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