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Light emitting device and electronic equipment including a light reflection layer, an insulation layer, and a plurality of pixel electrodes

專利號(hào)
US12178080B2
公開日期
2024-12-24
申請(qǐng)人
SEIKO EPSON CORPORATION(JP Tokyo)
發(fā)明人
Takeshi Koshihara; Ryoichi Nozawa
IPC分類
H10K59/121; H10K50/00; H10K50/805; H10K50/818; H10K50/824; H10K50/852; H10K50/856; H10K59/12; H10K59/123; H10K59/124; H10K59/126; H10K59/30; H10K59/35; H10K59/38; H10K102/00
技術(shù)領(lǐng)域
insulation,electrode,pixel,film,light,layer,emission,emitting,in,relay
地域: Tokyo

摘要

A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer thickness part, and a third layer thickness part, a pixel electrode that is provided on the first insulation layer, a second insulation layer that covers a peripheral section of the pixel electrode, a light emission functional layer, a facing electrode, and a conductive layer that is provided on the first layer thickness part. The pixel electrode includes a first pixel electrode which is provided in the first layer thickness part, a second pixel electrode which is provided in the second layer thickness part, and a third pixel electrode which is provided in the third layer thickness part. The first pixel electrode, the second pixel electrode, and the third pixel electrode are connected to the transistor through the conductive layer.

說明書

Meanwhile, FIG. 4 illustrates the first transistor 21, the second transistor 22, wirings, which are related to the first transistor 21 and the second transistor 22, and the like of the pixel circuit, and does not illustrate the third transistor 23. FIG. 5 illustrates the third transistor 23, wirings, which are related to the third transistor 23, and the like of the pixel circuit and does not illustrate the first transistor 21 and the second transistor 22. In FIGS. 6 to 8, the second transistor 22, the third transistor 23, the wirings, which are related to the second transistor 22 and the third transistor 23, and the like are illustrated but the first transistor 21 is not illustrated.

First, a cross-sectional structure of the area, in which the openings 29B, 29G, and 29R are provided, in the second insulation layer 29 which defines the light emission area, will be described with reference to FIG. 4.

As shown in FIG. 4, the organic EL apparatus 100 includes the element substrate 10, a sealing substrate 70, and a resin layer 71 which is interposed between the element substrate 10 and the sealing substrate 70.

權(quán)利要求

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