白丝美女被狂躁免费视频网站,500av导航大全精品,yw.193.cnc爆乳尤物未满,97se亚洲综合色区,аⅴ天堂中文在线网官网

Light emitting device and electronic equipment including a light reflection layer, an insulation layer, and a plurality of pixel electrodes

專利號(hào)
US12178080B2
公開(kāi)日期
2024-12-24
申請(qǐng)人
SEIKO EPSON CORPORATION(JP Tokyo)
發(fā)明人
Takeshi Koshihara; Ryoichi Nozawa
IPC分類
H10K59/121; H10K50/00; H10K50/805; H10K50/818; H10K50/824; H10K50/852; H10K50/856; H10K59/12; H10K59/123; H10K59/124; H10K59/126; H10K59/30; H10K59/35; H10K59/38; H10K102/00
技術(shù)領(lǐng)域
insulation,electrode,pixel,film,light,layer,emission,emitting,in,relay
地域: Tokyo

摘要

A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer thickness part, and a third layer thickness part, a pixel electrode that is provided on the first insulation layer, a second insulation layer that covers a peripheral section of the pixel electrode, a light emission functional layer, a facing electrode, and a conductive layer that is provided on the first layer thickness part. The pixel electrode includes a first pixel electrode which is provided in the first layer thickness part, a second pixel electrode which is provided in the second layer thickness part, and a third pixel electrode which is provided in the third layer thickness part. The first pixel electrode, the second pixel electrode, and the third pixel electrode are connected to the transistor through the conductive layer.

說(shuō)明書(shū)

A first interlayer insulation film 15 is provided to cover the gate electrode 22g. In the first interlayer insulation film 15, for example, contact holes, which reach the drain of the first transistor 21 and the gate electrode 22g of the second transistor 22, are provided. A conductive film, which coats at least the insides of the contact holes and covers a surface of the first interlayer insulation film 15, is formed. When the conductive film is patterned, wiring, which connects, for example, a drain electrode 21d of the first transistor 21 to the gate electrode 22g of the second transistor 22, is provided.

Subsequently, a second interlayer insulation film 16 is provided to cover the first interlayer insulation film 15 and the wirings on the first interlayer insulation film 15. In the second interlayer insulation film 16, contact holes, which reach the wirings provided on the first interlayer insulation film 15, are provided. A conductive film, which coats at least the insides of the contact holes and covers a surface of the second interlayer insulation film 16, is formed. When the conductive film is patterned, for example, a contact section, which electrically connects one side electrode 24a of the storage capacitor 24 to the gate electrode 22g of the second transistor 22, is provided. In addition, the data line 12 is provided in the same layer as the one side electrode 24a of the storage capacitor 24. The data line 12 is connected to a source of the first transistor 21 through the relay electrode (wiring) which is not shown in FIG. 4.

權(quán)利要求

1
微信群二維碼
意見(jiàn)反饋