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Light emitting device and electronic equipment including a light reflection layer, an insulation layer, and a plurality of pixel electrodes

專利號
US12178080B2
公開日期
2024-12-24
申請人
SEIKO EPSON CORPORATION（JP Tokyo）
發(fā)明人
Takeshi Koshihara; Ryoichi Nozawa
IPC分類
H10K59/121; H10K50/00; H10K50/805; H10K50/818; H10K50/824; H10K50/852; H10K50/856; H10K59/12; H10K59/123; H10K59/124; H10K59/126; H10K59/30; H10K59/35; H10K59/38; H10K102/00
技術領域
insulation,electrode,pixel,film,light,layer,emission,emitting,in,relay
地域： Tokyo

摘要

A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer thickness part, and a third layer thickness part, a pixel electrode that is provided on the first insulation layer, a second insulation layer that covers a peripheral section of the pixel electrode, a light emission functional layer, a facing electrode, and a conductive layer that is provided on the first layer thickness part. The pixel electrode includes a first pixel electrode which is provided in the first layer thickness part, a second pixel electrode which is provided in the second layer thickness part, and a third pixel electrode which is provided in the third layer thickness part. The first pixel electrode, the second pixel electrode, and the third pixel electrode are connected to the transistor through the conductive layer.

說明書

In step S3, titanium nitride is formed to have a film thickness of approximately 50 nm using, for example, the sputtering method, and the relay electrode 106 is formed by patterning the titanium nitride as shown in FIG. 10C. The relay electrode 106 is formed to cover the openings of the power line 14 in a planar view, and is connected to the relay electrode 14c through the contact hole 25CT.

In step S4, silicon oxide is formed to have a film thickness of approximately 60 nm to 70 nm using, for example, the plasma CVD method, and the second insulation film 26, which covers the first insulation film 25 and the relay electrode 106, is formed as shown in FIG. 10D.

Subsequently, in step S5, an opening C1 is formed by etching and removing a part of the second insulation film 26 using, for example, a dry etching method using fluorine containing gas, as shown in FIG. 11A. That is, the second insulation film 26 is not formed in the first area 28B and the second area 28G, which correspond to the opening C1, and the second insulation film 26 is provided in the third area 28R in which the opening C1 is not formed. Here, the contact hole 28CT2, which exposes a part of the relay electrode 106R of the third area 28R, is formed.

權利要求

1
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