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Light emitting device and electronic equipment including a light reflection layer, an insulation layer, and a plurality of pixel electrodes

專利號
US12178080B2
公開日期
2024-12-24
申請人
SEIKO EPSON CORPORATION（JP Tokyo）
發(fā)明人
Takeshi Koshihara; Ryoichi Nozawa
IPC分類
H10K59/121; H10K50/00; H10K50/805; H10K50/818; H10K50/824; H10K50/852; H10K50/856; H10K59/12; H10K59/123; H10K59/124; H10K59/126; H10K59/30; H10K59/35; H10K59/38; H10K102/00
技術領域
insulation,electrode,pixel,film,light,layer,emission,emitting,in,relay
地域： Tokyo

摘要

A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer thickness part, and a third layer thickness part, a pixel electrode that is provided on the first insulation layer, a second insulation layer that covers a peripheral section of the pixel electrode, a light emission functional layer, a facing electrode, and a conductive layer that is provided on the first layer thickness part. The pixel electrode includes a first pixel electrode which is provided in the first layer thickness part, a second pixel electrode which is provided in the second layer thickness part, and a third pixel electrode which is provided in the third layer thickness part. The first pixel electrode, the second pixel electrode, and the third pixel electrode are connected to the transistor through the conductive layer.

說明書

In step S16, the pixel electrode 31B, which is directly connected to the relay electrode 106B, is formed in the first area 28B, the pixel electrode 31G, which is connected to the relay electrode 106G through the contact hole 28CT1, is formed in the second area 28G, and the pixel electrode 31R, which is connected to the relay electrode 106R through the contact hole 28CT2, is formed in the third area 28R, as shown in FIG. 16C.

In the embodiment, since the first organic insulation film 61a, which corresponds to the second insulation film 26 according to the first embodiment, and the second organic insulation film 61b, which corresponds to the third insulation film 27 according to the first embodiment, are formed by a photolithographic process with negative resistance (photosensitive acrylic resin), and the process to form and etch a film, which is necessary to form the second insulation film 26 and the third insulation film 27 of the first embodiment, is omitted. Accordingly, compared to the first embodiment, the process to manufacture the first insulation layer 28 is simplified, and thus it is possible to improve the productivity of the organic EL apparatus 200 and to reduce the manufacturing cost of the organic EL apparatus 200.

Third Embodiment

Electronic Equipment

FIG. 17 is a schematic diagram illustrating a head mounted display as an example of electronic equipment.

權利要求

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