Electronic device
地域：
Seoul
摘要
Provided is an electronic device. The electronic device includes at least one first transistor to which a data voltage is applied. The first transistor includes a first conductive layer disposed on a substrate and a first active layer, which is disposed on the first conductive layer, has one end and the other end which are made conductive, and includes a first channel region disposed between the one end and the other end. A second conductive layer overlapping the first conductive layer with a first insulating layer interposed between the second conductive layer and the first conductive layer is included in a storage capacitor in a panel, and the storage capacitor is disposed under the first channel region of the first active layer. In this way, an ultra-high definition panel is fabricated.
說(shuō)明書
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This application claims priority from Korean Patent Application No. 10-2019-0082473, filed on Jul. 9, 2019, which is hereby incorporated by reference for all purposes as if fully set forth herein.
The present disclosure relates to an electronic device.
With the development of information societies, demands for various electronic devices, such as display devices and light fixtures, are increasing in various forms. Such an electronic device may include a panel in which data lines and gate lines are disposed, a data driver for driving the data lines, and a gate driver for driving the gate lines.
In the panel which is the core of the electronic device, numerous transistors for various functions may be disposed to drive the panel.
For this reason, a panel manufacturing process is complicated and difficult to manage. Accordingly, pursuing the convenience of a process may cause degradation in the device performance of transistors.
Also, the degree of integration of transistors is increased to achieve excellent characteristics, such as high resolution, of an electronic device. However, due to the problems in a process and design, it is not possible to reduce the size of transistors limitlessly. Consequently, it is necessary to provide a transistor having a structure for providing an electronic device having high resolution without degrading characteristics of the transistor.
權(quán)利要求
What is claimed is:1. An electronic device, comprising:a panel including a first transistor to which a data voltage is configured to be applied; a second transistor electrically connected to a data line among a plurality of data lines disposed on the substrate; and a driving circuit configured to drive the panel, wherein the first transistor comprises:a first conductive layer disposed on a substrate; and a first active layer disposed on the first conductive layer, having one end and the other end made conductive, and including a first channel region disposed between the one conductive end and the other conductive end, wherein a second conductive layer disposed to overlap the first conductive layer with a first insulating layer interposed between the second conductive layer and the first conductive layer constitutes a storage capacitor in the panel, wherein the storage capacitor is disposed under the first channel region of the first active layer, wherein the second conductive layer is a gate electrode of the first transistor, wherein one of a first electrode and the first conductive layer is a source electrode of the first transistor and contacts the one conductive end of the first active layer, wherein the other of the first electrode and the first conductive layer is a drain electrode of the first transistor and contacts the other conductive end of the first active layer, wherein the first electrode is disposed above the first and second conductive layers and under the first active layer, wherein:the first insulating layer is disposed on the first conductive layer, the second conductive layer is disposed on the first insulating layer, the first electrode corresponds to one of a plurality of gate lines disposed on the substrate, a second insulating layer is disposed under the first electrode, and the one end of the first active layer is in contact with the first electrode through a first hole provided in a fourth insulating layer on the first electrode, and wherein the second transistor comprises:a second electrode disposed on the substrate and corresponding to the data line; a second active layer disposed on a third insulating layer having at least one layer, which is disposed between the first insulating layer and the second insulating layer disposed on the second electrode and including a third hole exposing a part of an upper surface of the second electrode, and including a second channel region; a first gate insulating layer disposed on the second active layer; and a first gate electrode disposed on the first gate insulating layer. 2. The electronic device of claim 1 ,wherein the other end of the first active layer is in contact with the first conductive layer through a second hole provided in the first to third insulating layers. 3. The electronic device of claim 1 , further comprising:a first protection layer disposed on the first active layer; and a third conductive layer disposed on the first protection layer, wherein a region of the first active layer overlapping the first protection layer and the third conductive layer is the first channel region of the first active layer. 4. The electronic device of claim 1 , wherein the fourth insulating layer is disposed between the second electrode and the first insulating layer and has the third hole exposing the part of the upper surface of the second electrode, andwherein the second active layer comprises:a first part disposed on a part of an upper surface of the third insulating layer and disposed on one side surface of each of the first, second, and fourth insulating layers in a region in which the third hole is provided; a second part extending from the first part to be in contact with the upper surface of the second electrode; a third part extending from the second part to a part of the upper surface of the third insulating layer and disposed on the other side surface of each of the first, second, and fourth insulating layers in the region in which the third hole is provided; and a fourth part extending from the third part, including a region disposed in a part of the upper surface of the third insulating layer, and made conductive. 5. The electronic device of claim 4 , wherein the first part and the third part of the second active layer correspond to the second channel region of the second active layer, andthe second channel region of the second active layer includes a part not parallel to the substrate. 6. The electronic device of claim 4 , wherein the fourth part of the second active layer does not overlap the first gate insulating layer, andthe fourth part is in contact with an upper surface of the second conductive layer through a fourth hole provided in the third insulating layer to be spaced apart from the third hole. 7. The electronic device of claim 1 , further comprising a third transistor electrically connected to a reference voltage line among a plurality of reference voltage lines disposed parallel to the data lines disposed on the substrate,wherein the third transistor comprises:a third electrode disposed in the same layer as the second electrode on the substrate, spaced apart from the second electrode, and corresponding to the reference voltage line; a third active layer disposed on the first and third insulating layers, which are disposed on the second and third electrodes and include a fifth hole exposing a part of an upper surface of the third electrode, and including a third channel region; a second gate insulating layer disposed on the third active layer; and a second gate electrode disposed on the second gate insulating layer. 8. The electronic device of claim 7 , wherein the third active layer comprises:a fifth part disposed on a part of an upper surface of the third insulating layer and disposed on one side surface of each of the first and third insulating layers in a region in which the fifth hole is provided; a sixth part extending from the fifth part to be in contact with the upper surface of the third electrode; a seventh part extending from the sixth part to a part of the upper surface of the third insulating layer and disposed on the other side surface of each of the first and third insulating layers in a region in which the fifth hole is provided; and an eighth part extending from the seventh part, disposed on a part of the upper surface of the third insulating layer, and made conductive. 9. The electronic device of claim 8 , wherein the fifth part and the seventh part of the third active layer correspond to the third channel region of the third active layer, andthe third channel region of the third active layer includes a part not parallel to the substrate. 10. The electronic device of claim 8 , wherein the fourth insulating layer is disposed between the third electrode and the first insulating layer, andwherein the first, third, and fourth insulating layers include a sixth hole exposing a part of the upper surface of the third electrode, and the eighth part of the third active layer does not overlap the second gate insulating layer and is in contact with the upper surface of the third electrode through the sixth hole. 11. The electronic device of claim 7 , wherein the first gate electrode of the second transistor and the second gate electrode of the third transistor are integrally formed and correspond to one of the plurality of gate lines crossing the data lines and the reference voltage lines disposed on the substrate. 12. The electronic device of claim 7 , wherein one of the second electrode and the second conductive layer is a source electrode of the second transistor,the other of the second electrode and the second conductive layer is a drain electrode of the second transistor, one of the third electrode and the first conductive layer is a source electrode of the first transistor, and the other of the third electrode and the first conductive layer is a drain electrode of the first transistor. 13. The electronic device of claim 1 , wherein the second insulating layer is over the first conductive layer and the second conductive layer, andwherein the first electrode is disposed over the second insulating layer. 14. The electronic device of claim 1 , wherein:the other conductive end of the first active layer contacts the other of the first electrode and the first conductive layer through a second hole in the first insulating layer, and the first active layer has a region formed along a sidewall of the first insulating layer in the second hole. 15. An electronic device, comprising:a panel including a first transistor configured to receive a data voltage; a second transistor connected to one of a plurality of data lines disposed on the substrate; and a driving circuit configured to drive the panel, wherein: the first transistor comprises:a first conductive layer disposed on a substrate; and a first active layer disposed on the first conductive layer, having one end and the other end made conductive, and including a first channel region disposed between the one conductive end and the other conductive end, a second conductive layer disposed to overlap the first conductive layer with a first insulating layer interposed between the second conductive layer and the first conductive layer constitutes a storage capacitor in the panel, the storage capacitor is disposed under the first channel region of the first active layer, a fourth electrode is disposed on the substrate, a second insulating layer is disposed on the fourth electrode, the first insulating layer is disposed on the first conductive layer, the second conductive layer and a fifth electrode are disposed on the first insulating layer, a third insulating layer is disposed on the second conductive layer and the fifth electrode, the first to third insulating layers include a seventh hole exposing a part of an upper surface of the fourth electrode, the one conductive end of the first active layer is in contact with the fourth electrode through the seventh hole, the other conductive end of the first active layer is in contact with the fifth electrode through an eighth hole provided in the third insulating layer, and the second transistor comprises:a sixth electrode disposed on the substrate; a second active layer disposed on the first and second insulating layers, which are disposed on the sixth electrode and include a ninth hole exposing a part of an upper surface of the sixth electrode, and including a second channel region; a first portion of a second gate insulating layer disposed on the second active layer; and a first gate electrode disposed on the first portion of the second gate insulating layer. 16. The electronic device of claim 15 , further comprising a first gate insulating layer disposed between the fifth electrode and the first insulating layer to overlap the fifth electrode,wherein the fifth electrode corresponds to one of a plurality of gate lines disposed on the substrate. 17. The electronic device of claim 15 , wherein the second conductive layer is a gate electrode of the first transistor,one of the fourth electrode and the fifth electrode is a source electrode of the first transistor, and the other of the fourth electrode and the fifth electrode is a drain electrode of the first transistor. 18. The electronic device of claim 15 , further comprising:a second protection layer disposed on the first active layer; and a third conductive layer disposed on the second protection layer, wherein a region of the first active layer overlapping the second protection layer and the third conductive layer is the first channel region of the first active layer. 19. The electronic device of claim 15 , wherein the second active layer comprises:a first region disposed on a part of an upper surface of the first insulating layer including the ninth hole and disposed on one side surface of each of the first and second insulating layers in a region in which the ninth hole is provided; a second region extending from the first region to be in contact with the upper surface of the sixth electrode; a third region extending from the second region to a part of the upper surface of the first insulating layer and disposed on the other side surface of each of the first and second insulating layers in the region in which the ninth hole is provided; and a fourth region extending from the third region, disposed in a part of the upper surface of the first insulating layer, and made conductive. 20. The electronic device of claim 19 , wherein:the fourth region of the second active layer does not overlap the first portion of the second gate insulating layer and the first gate electrode and overlaps the first conductive layer, and the fourth region overlapping the first conductive layer corresponds to the second conductive layer. 21. The electronic device of claim 19 , wherein the first and third regions correspond to the second channel region of the second active layer, andthe second channel region of the second active layer includes a part not parallel to the substrate. 22. The electronic device of claim 15 , further comprising a third transistor electrically connected to one of a plurality of reference voltage lines disposed on the substrate,wherein the third transistor comprises:a seventh electrode disposed in the same layer as the sixth electrode on the substrate and spaced apart from the sixth electrode; a third active layer disposed on the first and second insulating layers, which are disposed on the sixth and seventh electrodes and include a tenth hole exposing a part of an upper surface of the seventh electrode, and including a third channel region; a second portion of the second gate insulating layer disposed on the third active layer; and a second gate electrode disposed on the second portion of the second gate insulating layer. 23. The electronic device of claim 22 , wherein the third active layer comprises:a fifth region disposed on a part of an upper surface of the first insulating layer including the tenth hole and disposed on one side surface of each of the first and second insulating layers in a region in which the tenth hole is provided; a sixth region extending from the fifth region to be in contact with the upper surface of the seventh electrode; a seventh region extending from the sixth region to a part of the upper surface of the first insulating layer and disposed on the other side surface of each of the first and second insulating layers in a region in which the tenth hole is provided; and an eighth region extending from the seventh region, disposed on a part of the upper surface of the first insulating layer, and made conductive. 24. The electronic device of claim 23 , wherein the eighth region of the third active layer does not overlap the second portion of the second gate insulating layer and the second gate electrode and is in contact with a part of the upper surface of the first conductive layer through an eleventh hole provided in the first insulating layer. 25. The electronic device of claim 23 , wherein the fifth and seventh regions correspond to the third channel region of the third active layer, andthe third channel region of the third active layer includes a part not parallel to the substrate. 26. The electronic device of claim 22 , wherein one of the sixth electrode and the second conductive layer is a source electrode of the second transistor,the other of the sixth electrode and the second conductive layer is a drain electrode of the second transistor, one of the seventh electrode and the first conductive layer is a source electrode of the first transistor, and the other of the seventh electrode and the first conductive layer is a drain electrode of the first transistor. 27. An electronic device, comprising:a panel; and a driving circuit configured to drive the panel, wherein a first transistor and a second transistor disposed on the panel comprise:a first electrode of the first transistor disposed on a substrate and a second electrode of the second transistor disposed apart from the first electrode; a first conductive layer on a first insulating layer disposed on the first electrode and the second electrode; a third insulating layer disposed on a second conductive layer on a second insulating layer; a first active layer of the first transistor and a second active layer of the second transistor which are disposed apart from each other on the third insulating layer; a fourth insulating layer disposed on the first and second active layers; and a first gate electrode of the first transistor and a second gate electrode of the second transistor which are disposed on the fourth insulating layer, wherein the first to third insulating layers include a first hole exposing a part of an upper surface of the first electrode and a second hole exposing a part of an upper surface of the first conductive layer, the first active layer is disposed on a part of an upper surface of the third insulating layer and in the first hole and includes a first channel region having a length proportional to a thickness of the first to third insulating layers, and the second active layer is disposed on a part of the upper surface of the third insulating layer and in the second hole and includes a second channel region having a length proportional to a thickness of the second and third insulating layers. 28. The electronic device of claim 27 , wherein one of the first electrode and the second conductive layer is a source electrode of the first transistor,the other of the first electrode and the second conductive layer is a drain electrode of the first transistor, one of the second electrode and the first conductive layer is a source electrode of the second transistor, the other of the second electrode and the first conductive layer is a drain electrode of the second transistor, and the first conductive layer constitutes a capacitor together with the second conductive layer disposed on the second insulating layer. 29. The electronic device of claim 27 , wherein the first active layer comprises:a first part disposed on a part of the upper surface of the third insulating layer and disposed on one side surface of each of the first to third insulating layers in a region in which the first hole is provided; a second part extending from the first part to be in contact with the upper surface of the first electrode; a third part extending from the second part to a part of the upper surface of the third insulating layer and disposed on the other side surface of each of the first to third insulating layers in the region in which the first hole is provided; and a fourth part extending from the third part, disposed on a part of the upper surface of the third insulating layer and in a third hole exposing a part of an upper surface of the second conductive layer disposed on the second insulating layer, and made conductive, and the first part and the third part correspond to the first channel region of the first active layer. 30. The electronic device of claim 27 , wherein the second active layer comprises:a fifth part disposed on a part of the upper surface of the third insulating layer and disposed on one side surface of each of the second and third insulating layers in a region in which the second hole is provided; a sixth part extending from the fifth part to be in contact with an upper surface of the first conductive layer; a seventh part extending from the sixth part to a part of the upper surface of the third insulating layer and disposed on the other side surface of each of the second and third insulating layers in the region in which the second hole is provided; and an eighth part extending from the seventh part, disposed on a part of the upper surface of the third insulating layer and in a fourth hole exposing a part of the upper surface of the second electrode, and made conductive, and the fifth part and the seventh part correspond to the second channel region of the second active layer. 31. The electronic device of claim 27 , further comprising a third transistor to which a data voltage is applied,wherein the third transistor comprises:a second conductive layer disposed on the second insulating layer and serving as a gate electrode; a third active layer disposed on the third insulating layer, the fourth insulating layer, and a fifth insulating layer, which are sequentially disposed on the second conductive layer, and including a third channel region; and a third electrode which is in contact with one end of the third active layer and the first conductive layer which is in contact with the other end of the third active layer, the third electrode is disposed on the fourth insulating layer, the first conductive layer is disposed on the first insulating layer, one of the third electrode and the first conductive layer is a source electrode of the third transistor, and the other of the third electrode and the first conductive layer is a drain electrode of the third transistor. 32. The electronic device of claim 31 , wherein the third channel region of the third active layer is disposed on a storage capacitor comprising the first conductive layer and the second conductive layer disposed on the first conductive layer. 33. The electronic device of claim 31 , wherein at least one of the first to third active layers of the first to third transistors has two or more layers.
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