As shown in FIG. 3, in each of the plurality of subpixels SP in the active region A/A of the panel PNL corresponding to an OLED panel, a driving transistor DRT and a switching transistor O-SWT may be disposed. However, the embodiments of the present disclosure are not limited thereto, and as shown in FIG. 4, three or more transistors may be disposed in the active region A/A of the panel PNL corresponding to an OLED panel.
Also, as shown in FIG. 2, when a gate driving circuit GDC is embodied in an INS1P type of gate driving circuit, that is, when the gate driving circuit GDC is embedded in the panel PNL, various transistors (Tup, Tdown, and transistors in the control switch circuit CSC) included in the gate driving circuit GDC as shown in FIG. 5 may be disposed in the non-active region N/A which is an outer region of the active region A/A of the panel PNL.
FIG. 6 is a plan view of a region in which transistors are disposed in an electronic device according to an embodiment of the present disclosure. FIG. 7 is a cross-sectional view taken along line A-B of FIG. 6. FIG. 8 is a cross-sectional view taken along line C-D of FIG. 6.
Referring to FIGS. 6 to 8, in a panel of the electronic device according to the embodiment of the present disclosure, a plurality of gate lines 160 and 161, a plurality of data lines 110, and a plurality of reference voltage lines 120 may be disposed.
