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Electronic device

專利號
US12178090B2
公開日期
2024-12-24
申請人
LG Display Co., Ltd.(KR Seoul)
發(fā)明人
SeHee Park; InTak Cho; PilSang Yun
IPC分類
H10K59/131; G09G3/3291; H10K59/124
技術領域
layer,insulating,transistor,electrode,gate,active,may,disposed,first,region
地域: Seoul

摘要

Provided is an electronic device. The electronic device includes at least one first transistor to which a data voltage is applied. The first transistor includes a first conductive layer disposed on a substrate and a first active layer, which is disposed on the first conductive layer, has one end and the other end which are made conductive, and includes a first channel region disposed between the one end and the other end. A second conductive layer overlapping the first conductive layer with a first insulating layer interposed between the second conductive layer and the first conductive layer is included in a storage capacitor in a panel, and the storage capacitor is disposed under the first channel region of the first active layer. In this way, an ultra-high definition panel is fabricated.

說明書

The plurality of data lines 110 and the plurality of reference voltage lines 120 may extend in a first direction (e.g., a horizontal direction), and the plurality of gate lines 160 and 161 may extend in a second direction crossing the first direction (e.g., a vertical direction).

The electronic device according to the embodiment of the present disclosure may include one or more transistors T1, T2, and T3. Also, the electronic device may include at least one storage capacitor Cst.

For example, when the electronic device includes a panel, the circuit region of one subpixel may include the first transistor T1, the second transistor T2, and the third transistor T3 and also include the at least one storage capacitor Cst.

The first transistor T1 may include a first electrode 110, a first active layer 130, a second conductive layer 151, and a gate electrode 160.

The first electrode 110 may be disposed on a substrate 100. As shown in FIG. 7, the first electrode 110 of the first transistor T1 may correspond to a data line 110 extending in the second direction.

On the substrate 100 on which the first electrode 110 is disposed, a first insulating layer 201 is disposed. Although the first insulating layer 201 is shown as a single layer in FIGS. 7 and 8, the present disclosure is not limited thereto. For example, the first insulating layer 201 may be composed of a plurality of layers.

權利要求

1
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