Electronic device
摘要
說明書
The first insulating layer 201, the second insulating layer 202, and the third insulating layer 203 may have a first hole H1 which exposes a part of the upper surface of the first electrode 110.
The first active layer 130 of the first transistor T1 may be disposed on a part of the upper surface of the third insulating layer 203 and in the first hole H1.
The first active layer 130 may be formed of an amorphous silicon (a-Si) semiconductor. A transistor TR including the first active layer 130 is referred to as a-Si transistor.
As another example, the first active layer 130 may be formed of an oxide semiconductor. A transistor TR including the first active layer 130 is referred to as an oxide transistor. In this case, the oxide semiconductor may be an n-type oxide semiconductor, such as an indium gallium zinc oxide (IGZO), an indium zinc oxide (IZO), and an indium titanium zinc oxide (ITZO), or a p-type oxide semiconductor such as CuOx, SnOx, and NiOx.
The first active layer 130 may include first to fourth parts 231, 232, 233, and 234 which are integrally formed.
The first part 231 of the first active layer 130 is disposed on a part of the upper surface of the third insulating layer 203 and one side surface of each of the first to third insulating layers 201 to 203 in a region in which the first hole H1 is provided.
The second part 232 of the first active layer 130 may extend from the first part 231 and may be in contact with the upper surface of the first electrode 110 exposed through the first hole H1.
