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Electronic device

專利號(hào)
US12178090B2
公開日期
2024-12-24
申請(qǐng)人
LG Display Co., Ltd.（KR Seoul）
發(fā)明人
SeHee Park; InTak Cho; PilSang Yun
IPC分類
H10K59/131; G09G3/3291; H10K59/124
技術(shù)領(lǐng)域
layer,insulating,transistor,electrode,gate,active,may,disposed,first,region
地域： Seoul

摘要

Provided is an electronic device. The electronic device includes at least one first transistor to which a data voltage is applied. The first transistor includes a first conductive layer disposed on a substrate and a first active layer, which is disposed on the first conductive layer, has one end and the other end which are made conductive, and includes a first channel region disposed between the one end and the other end. A second conductive layer overlapping the first conductive layer with a first insulating layer interposed between the second conductive layer and the first conductive layer is included in a storage capacitor in a panel, and the storage capacitor is disposed under the first channel region of the first active layer. In this way, an ultra-high definition panel is fabricated.

說明書

The second active layer 140 of the second transistor T2 may include a second channel region CHA2.

The second channel region CHA2 may be the fifth part 245 and the seventh part 247.

As shown in FIG. 6, the second channel region CHA2 may be disposed to surround the entrance of third first hole H2 in a plane view.

The second channel region CHA2 shown in FIG. 6 may be a region of the fifth part 245 of the second active layer 140 disposed on the upper surface of the third insulating layer 203 and a region of the seventh part 247 of the second active layer 140 disposed on the upper surface of the third insulating layer 203.

The second channel region CHA2 of the second active layer 140 may include a region which is not disposed parallel to the substrate 100 as shown in FIG. 7.

Due to the above-described structure of the second channel region CHA2, the second channel region CHA2 in the second active layer 140 may have a short length.

For this reason, the area of the second transistor T2 including the second active layer 140 can be reduced, and the size of subpixels SP in which the second transistor T2 is disposed can also be reduced. Consequently, it can be easy to fabricate a high-resolution panel.

權(quán)利要求

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