Electronic device
摘要
說明書
In another aspect, each of the fifth and seventh parts 245 and 247 of the second active layer 140 is disposed on the side surfaces of the second and third insulating layers 202 and 203. Consequently, the length of the second channel region CHA2 may be proportional to the sum of the thicknesses of the second and third insulating layers 202 and 203.
In the second transistor T2 according to the embodiment of the present disclosure, the length of the second channel region CHA2 can be adjusted only by adjusting the length of the second and third insulating layers 202 and 203.
Also, in the first and second transistors T1 and T2 present in one subpixel SP, the channel regions of the first and second active layers 130 and 140 may have different lengths.
As described above, the length of the first channel region CHA1 of the first active layer 130 is proportional to the thickness of the first to third insulating layers 201 to 203, and the length of the second channel region CHA2 of the second active layer 140 is proportional to the thickness of the second and third insulating layers 202 and 203. Therefore, the first channel region CHA1 may have a greater length than the second channel region CHA2.
For example, the length of the first channel region CHA1 may be greater than the length of the second channel region CHA2 by two times the thickness of the first insulating layer 201.
