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Electronic device

專利號(hào)
US12178090B2
公開日期
2024-12-24
申請人
LG Display Co., Ltd.（KR Seoul）
發(fā)明人
SeHee Park; InTak Cho; PilSang Yun
IPC分類
H10K59/131; G09G3/3291; H10K59/124
技術(shù)領(lǐng)域
layer,insulating,transistor,electrode,gate,active,may,disposed,first,region
地域： Seoul

摘要

Provided is an electronic device. The electronic device includes at least one first transistor to which a data voltage is applied. The first transistor includes a first conductive layer disposed on a substrate and a first active layer, which is disposed on the first conductive layer, has one end and the other end which are made conductive, and includes a first channel region disposed between the one end and the other end. A second conductive layer overlapping the first conductive layer with a first insulating layer interposed between the second conductive layer and the first conductive layer is included in a storage capacitor in a panel, and the storage capacitor is disposed under the first channel region of the first active layer. In this way, an ultra-high definition panel is fabricated.

說明書

In the case of a high-resolution panel, the area of subpixels SP is reduced, and widths W of a plurality of holes disposed in the subpixels SP may also be reduced accordingly.

Since the current characteristic of transistors may be degraded in the high-resolution panel due to the reduction in the widths W of holes, channels may be formed with short lengths to ensure the current characteristic of the transistors.

According to the embodiment of the present disclosure, the length of the first channel region CHA1 may be adjusted through the thickness of the first to third insulating layers 201 to 203.

In other words, according to the embodiment of the present disclosure, the length of the first channel region CHA1 may be shortened by forming the first to third insulating layers 201 to 203 to be thin.

Also, the length of the first channel region CHA1 disposed on the first to third insulating layers 201 to 203 in the first hole H1 may be adjusted by adjusting an angle Z between the substrate 100 and the first to third insulating layers 201 to 203. In this way, the length of the first channel region CHA1 may be adjusted to be applicable to a high-resolution panel.

Although FIG. 10A shows a structure in which the first active layer 130 including the first channel region CHA1 has a single layer, the present disclosure is not limited thereto. For example, the first active layer 130 may have two or more layers.

A structure of a first active layer according to another embodiment of the present disclosure will be described below with reference to FIG. 10B.

權(quán)利要求

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