FIG. 10B is a diagram illustrating another structure of a first active layer of the first transistor.
In the following description, details (a configuration, effects, etc.) which are the same as those of the above-described embodiments may be omitted.
Referring to FIG. 10B, a first active layer 330 of the first transistor T1 may include a first layer 131 disposed on the first to third insulating layers 201 to 203 and a second layer 132 disposed on the first layer 131.
The first layer 131 of the first active layer 330 may have the same structure as the first active layer 130 shown in FIG. 10A, but the present disclosure is not limited thereto.
The first layer 131 and the second layer 132 of the first active layer 330 of FIG. 10B may be oxide semiconductors. For example, the first layer 131 and the second layer 132 may include oxygen (O) and at least one of indium (In), gallium (Ga), zinc (Zn), titanium (Ti), and tin (Sn).
