Electronic device
摘要
說明書
The embodiments of the present disclosure are not limited thereto, and when the gate electrode 160 of the first transistor T1 is disposed under the first active layer 330, the main channel region of the first active layer 330 may be the first part 231a and the third part 233a of the first layer 131.
In other words, according to the embodiment of the present disclosure, the position of the main channel region of the first active layer 330 may be changed depending on the position of the gate electrode 160 of the first transistor T1.
When the first active layer 330 has two or more layers as described above, it is possible to prevent characteristics of the first transistor T1 from being degraded by degradation of the uniformity of layer formation. In other words, since the first active layer 330 has two or more layers, the reliability of the first active layer 330 can be improved.
Although a structure in which the first active layer 330 of the first transistor T1 has two or more layers has been described in
Meanwhile, as shown in
The third transistor T3 may include a third electrode 161, the second conductive layer 151, and a third active layer 170.
