Electronic device
摘要
說明書
Also, the second to fifth insulating layers 202 to 205 and the second gate insulating layer 132 may have the sixth hole H6 which exposes a part of the upper surface of the first conductive layer 150, and the other end 373 of the third active layer 170 may be disposed on the first conductive layer 150 in the sixth hole H6.
Each of the third electrode 161 and the first conductive layer 150 may serve as any one of the source electrode and the drain electrode of the third transistor T3. For example, the third electrode 161 may serve as the source electrode of the third transistor T3, and the first conductive layer 150 may serve as the drain electrode of the third transistor T3, but the present disclosure is not limited thereto. The third electrode 161 may serve as the drain electrode, and the first conductive layer 150 may serve as the source electrode.
In other words, the third electrode 161 may be the source electrode or the drain electrode of the third transistor T3 as well as the second gate line 161.
Also, the first conductive layer 150 may be an electrode of the storage capacitor Cst, the source electrode or the drain electrode of the second transistor T2, and also the source electrode or the drain electrode of the third transistor T3 simultaneously.
As such, in the structure, the source electrode or the drain electrode of the third transistor T3 does not branch from a plurality of lines. Consequently, it is possible to reduce the area of subpixels SP in the active region A/A.
The third active layer 170 of the third transistor T3 may include a third channel region CHA3.
