Electronic device
摘要
說明書
Also, as for a fifth active layer 440 of the second transistor T2 to be described below, the contact resistance between the fifth active layer 440 and a fifth electrode 421 may be reduced in the same way as the contact resistance between the fourth active layer 430 and the fourth electrode 411.
The third region 433 of the fourth active layer 430 may extend from the second region 432 to a part of the upper surface of the second insulating layer 402 and may be disposed on the other side surface of each of the first and second insulating layers 401 and 402 in the region in which the seventh hole H7 is provided.
The fourth region 434 of the fourth active layer 430 may be a part extending from the third region 433, disposed on a part of the upper surface of the second insulating layer 402, and made conductive. In other words, the fourth region 434 of the fourth active layer 430 may have a higher electrical conductivity than the first to third regions 431 to 433 of the fourth active layer 430.
Each of the fourth electrode 411 and the fourth region 434 of the fourth active layer 430 may serve as any one of the source electrode and the drain electrode of the first transistor T1. For example, the fourth electrode 411 may serve as the source electrode of the first transistor T1, and the fourth region 434 of the fourth active layer 430 may serve as the drain electrode of the first transistor T1, but the present disclosure is not limited thereto. The fourth electrode 411 may serve as the drain electrode, and the fourth region 434 of the fourth active layer 430 may serve as the source electrode.
