Electronic device
摘要
說明書
The length of the fourth channel region CHA4 may be the sum of the length of the first region 431 and the length of the third region 433 of the fourth active layer 430.
Specifically, the length of the first region 431 and the third region 433 corresponding to a part of the fourth channel region CHA4 may be the sum of the lengths of parts of the first region 431 and the third region 433 disposed on the upper surface of the second insulating layer 402 (hereinafter, “fifth length”) and the lengths of parts of the first region 431 and the third region 433 disposed on the side surfaces of the first and second insulating layers 401 and 402 in the seventh hole H7 (hereinafter, “sixth length”).
The fifth length may be a length in a direction corresponding to cross-section line E-F, and the sixth length may be a length in a direction perpendicular to cross-section line E-F.
The length of the fourth channel region CHA4 may be proportional to the length of the first and third regions 431 and 433.
In another aspect, each of the first and third regions 431 and 433 of the fourth active layer 430 is disposed on the side surfaces of the first and second insulating layers 401 and 402. Consequently, the length of the fourth channel region CHA4 may be proportional to the sum of the thicknesses of the first and second insulating layers 401 and 402.
