Electronic device
摘要
說明書
The fifth electrode 421 may be disposed on the substrate 400. As shown in
On the substrate 400 on which the fifth electrode 421 is disposed, the first insulating layer 401 may be disposed.
The first conductive layer 450 and the second insulating layer 402 may be sequentially disposed on the first insulating layer 401.
In the first insulating layer 401 and the second insulating layer 402, an eighth hole H8 which exposes a part of the upper surface of the fifth electrode 421 may be provided.
The fifth active layer 440 of the second transistor T2 may be disposed on a part of the upper surface of the second insulating layer 402 and in the eighth hole H8.
The fifth active layer 440 may be an a-Si semiconductor or an oxide semiconductor, but the present disclosure is not limited thereto.
The fifth active layer 440 may include fifth to eighth regions 445 to 448 which are integrally formed.
