Electronic device
摘要
說明書
As such, in the structure, the source electrode or the drain electrode of the third transistor T3 does not branch from a plurality of lines. Consequently, the area of subpixels SP in the active region A/A may be reduced by an area required for branching out into the source electrode and the drain electrode.
The sixth active layer 470 of the third transistor T3 may include a sixth channel region CHA6.
The six channel region CHA6 may be a region overlapping a second protection layer 607 and a third conductive layer 480 disposed on the sixth active layer 470.
The length of the sixth channel region CHA6 may correspond to the width of the second protection layer 607 and also the width of the third conductive layer 480.
The sixth channel region CHA6 of the sixth active layer 470 may overlap the second conductive layer 434 of the third transistor T3.
The one end 471 and the other end 473 of the sixth active layer 470 may be made conductive unlike the sixth channel region CHA6. The one end 471 and the other end 473 of the sixth active layer 470 may have a higher electrical conductivity than the sixth channel region CHA6.
The one end 471 of the sixth active layer 470, which is a region made conductive, may be in contact with the sixth electrode 420, and the other end 473 of the sixth active layer 470, which is another region made conductive, may be in contact with the seventh conductive layer 461.
