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Electronic device

專利號
US12178090B2
公開日期
2024-12-24
申請人
LG Display Co., Ltd.(KR Seoul)
發(fā)明人
SeHee Park; InTak Cho; PilSang Yun
IPC分類
H10K59/131; G09G3/3291; H10K59/124
技術領域
layer,insulating,transistor,electrode,gate,active,may,disposed,first,region
地域: Seoul

摘要

Provided is an electronic device. The electronic device includes at least one first transistor to which a data voltage is applied. The first transistor includes a first conductive layer disposed on a substrate and a first active layer, which is disposed on the first conductive layer, has one end and the other end which are made conductive, and includes a first channel region disposed between the one end and the other end. A second conductive layer overlapping the first conductive layer with a first insulating layer interposed between the second conductive layer and the first conductive layer is included in a storage capacitor in a panel, and the storage capacitor is disposed under the first channel region of the first active layer. In this way, an ultra-high definition panel is fabricated.

說明書

For convenience of description, a region of one subpixel in which three transistors and one capacitor are disposed in an electronic device will be mainly described below.

In the following description, details (a configuration, effects, etc.) which are the same as those of the above-described embodiments may be omitted.

Referring to FIG. 15, the data line 110 and the reference voltage line 120 arranged in the first direction may be disposed on the substrate 100. The data line 110 and the reference voltage line 120 may be disposed apart from each other.

The data line 110 and the reference voltage line 120 may be disposed in the same layer and formed of the same material.

Although FIG. 15 shows a configuration in which one data line 110 and one reference voltage line 120 are disposed on the substrate 100, the present disclosure is not limited thereto. A plurality of data lines 110 and a plurality of reference voltage lines 120 may be disposed on the substrate 100.

The data line 110 may be used as a first electrode which is the source electrode or the drain electrode of the first transistor T1. The reference voltage line 120 may be used as a second electrode which is the source electrode or the drain electrode of the second transistor T2.

Referring to FIG. 16, the first insulating layer 201 may be disposed on the substrate 100 on which the data line 110 and the reference voltage line 120 are disposed.

權利要求

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