FIG. 10B is a diagram illustrating another structure of a first active layer of the first transistor;
FIG. 11 is a cross-sectional view illustrating another structure of a third transistor of the electronic device according to the embodiment of the present disclosure;
FIG. 12 is a plan view of a region in which transistors are disposed in an electronic device according to another embodiment of the present disclosure;
FIG. 13 is a cross-sectional view taken along line E-F of FIG. 12;
FIG. 14 is a cross-sectional view taken along line G-H of FIG. 12;
FIGS. 15 to 26 are diagrams schematically illustrating a method of fabricating the electronic device having the structure of FIGS. 6 to 8; and
FIGS. 27 to 36 are diagrams schematically illustrating a method of fabricating the electronic device having the structure of FIGS. 12 to 14.
DETAILED DESCRIPTION
