Electronic device
摘要
說明書
The second gate insulating layer 132 may also extend in the same direction as the data line 110 extends.
In addition, the second gate insulating layer 132 may overlap a part of the second active layer material 140a and the third hole H3.
In the dry etching process, the first and second active layer materials 130a and 140a disposed in regions in which the first and second gate insulating layers 131 and 132 are disposed remain without any change, but the first and second active layer materials 130a and 140a disposed in regions from which the gate insulating layer material is removed may be made conductive.
In the dry etching process, the first and second gate insulating layers 131 and 132 may shield the first and second active layers 130 and 140 disposed thereunder from plasma. In this case, the first and second gate insulating layers 131 and 132 may also shield the second part 232 and the sixth part 246 of the first and second active layers 130 and 140 from plasma.
In another aspect, the first and second gate insulating layers 131 and 132 may prevent the first and second channel regions CHA1 and CHA2 of the first and second active layers 130 and 140 from being made conductive in the dry etching process.
For this reason, the first active layer 130 may include the fourth part 234 which is not made conductive in a region not overlapping the first gate insulating layer 131, and the second active layer 140 may include the eighth part 248 which is not made conductive in a region not overlapping the second gate insulating layer 132.
