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Electronic device

專(zhuān)利號(hào)
US12178090B2
公開(kāi)日期
2024-12-24
申請(qǐng)人
LG Display Co., Ltd.（KR Seoul）
發(fā)明人
SeHee Park; InTak Cho; PilSang Yun
IPC分類(lèi)
H10K59/131; G09G3/3291; H10K59/124
技術(shù)領(lǐng)域
layer,insulating,transistor,electrode,gate,active,may,disposed,first,region
地域： Seoul

摘要

Provided is an electronic device. The electronic device includes at least one first transistor to which a data voltage is applied. The first transistor includes a first conductive layer disposed on a substrate and a first active layer, which is disposed on the first conductive layer, has one end and the other end which are made conductive, and includes a first channel region disposed between the one end and the other end. A second conductive layer overlapping the first conductive layer with a first insulating layer interposed between the second conductive layer and the first conductive layer is included in a storage capacitor in a panel, and the storage capacitor is disposed under the first channel region of the first active layer. In this way, an ultra-high definition panel is fabricated.

說(shuō)明書(shū)

The third active layer material 170a may extend from a part of the upper surface of the fifth insulating layer 205 to be disposed in the fifth hole H5, may extend from the region disposed in the fifth hole H5 to the upper surface of the fifth insulating layer 205 to be disposed in the sixth hole H6, and may be formed to extend from the region disposed in the sixth hole H6 to a part of the upper surface of the fifth insulating layer 205.

The third active layer material 170a may be formed through MOCVD or ALD so as to be formed in the fifth hole H5 and the sixth hole H6 having small widths without disconnection.

Subsequently, as shown in FIG. 24, a first protection layer material 307a may be formed on the substrate 100 on which the third active layer material 170a is formed.

Then, as shown in FIG. 25, the first protection layer material 307a is patterned into the first protection layer 307 disposed on a part of the upper surface of the third active layer 170 through a dry etching process. Also, a third conductive layer material may be formed on the first protection layer material 307a. The first protection layer material 307a and the third conductive layer material may be etched through the same process so that the first protection layer 307 and the third conductive layer 180 may be formed, but the present disclosure is not limited thereto.

權(quán)利要求

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