Display apparatus
摘要
說明書
In another embodiment, the active areas A4i(j?1), A1ij, A4ij, A7ij, and A7i(j+1), the first contact area Acp1, and the second contact area Acp2 may include an oxide semiconductor material. In an embodiment, the active areas A4i(j?1), A1ij, A4ij, A7ij, and A7i(j+1), the first contact area Acp1, and the second contact area Acp2 may include an oxide of at least one material of indium (In), gallium (Ga), stannum (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chrome (Cr), titanium (Ti), aluminum (Al), cesium (Cs), cerium (Ce), and zinc (Zn), for example.
In an embodiment, the active areas A4i(j?1), A1ij, A4ij, A7ij, and A7i(j+1), the first contact area Acp1, and the second contact area Acp2 may include an InSnZnO (“ITZO”) semiconductor layer, an InGaZnO (“IGZO”) semiconductor layer, or the like, for example. Because an oxide semiconductor has a wide band gap (about 3.1 electron-volts (eV)), high carrier mobility, and low leakage current, a voltage drop is not large even when a driving time is long, and thus, a luminance change due to the voltage drop is not large even in the case of a low-frequency driving.
Each of the active areas A4i(j?1), A1ij, A4ij, A7ij, and A7i(j+1) may include a channel area, and a source area and a drain area respectively arranged at opposite sides of the channel area. The active areas A4i(j?1), A1ij, A4ij, A7ij, and A7i(j+1) may include a single layer or multiple layers.
