A conductive layer may be arranged on the inter-insulating layer 217. In an embodiment, the conductive layer may include a conductive material including Mo, Al, Cu, Ti, or the like, and may include a multi-layer or a single layer including the above-described materials. In an embodiment, the conductive layer may have a multi-layer structure of a Ti layer, an Al layer, and another Ti layer, for example.
The conductive layer may include a connection line CML, a first voltage line VL1, and a second voltage line VL2.
The connection line CML, the first voltage line VL1, and the second voltage line VL2 may be respectively connected to the active areas A4i(j?1), A1ij, A4ij, A7ij, and A7i(j+1), the first contact area Acp1, and the second contact area Acp2 through contact holes defined in the insulating layers.
In an embodiment, the connection line CML may be connected to the active area A7ij of the anode initialization transistor T7ij of a second pixel PXij through a contact hole defined in the first gate insulating layer 213, the second gate insulating layer 215, and the inter-insulating layer 217, for example. The connection line CML may connect a light-emitting element 300 and the anode initialization transistor T7ij of the second pixel PXij to each other.