FIG. 9 is an enlarged view of a modification of the portion A in the illustration (b) of FIG. 1 with the sealing layer 6 removed. The second metal film 25T is formed to cover at least a portion of the edge of the analysis layer 24T. For example, as illustrated in FIG. 9, the second metal film 25T is formed of the second electrode 25 (the cathode), and covers one of the four side edges of each analysis EL layer 24T of the analysis sub-pixels TR, TG, and TB, Moreover, the ground wire GW is formed of the first metal film 22T, and lead out of the sealing layer 6 over the edge side 6E of the sealing layer 6.

FIG. 10 is a schematic view illustrating a configuration of a TOF-SIMS analyzer 41 analyzing the analysis EL layer 24T. Illustrations (a) to (c) of FIG. 11 are schematic views showing a sequence of an analysis carried out with the TOF-SIMS analyzer 41. The TOF-SIMS involves emitting an ion beam (primary ions) to a solid specimen, and mass-separating ions (secondary ions) released from a surface of the solid specimen utilizing a variation in time of flight of the released ions (i.e. the time of flight is in proportion to a square root of the weight of the released ions). Hence, the TOF-SIMS can highly sensitively detect information on an element or a molecular species existing in a depth of 1 nm or below the surface of the solid specimen.