In contrast, as seen in the illustration (a) of FIG. 15, the result of still the other analysis of the analysis EL layer 24T according to the this embodiment shows that, when the charges are accumulated on the surface of the analysis EL layer 241 by the treatments with the sputter gun 42 and the primary ion gun 43, the accumulated charges are dissipated through the second metal film 25T, the first metal film 221, and the ground wire. Hence, the profile of the intensity signal according to the mass separation is not disturbed, avoiding the complete stop of outputting the intensity signal.

An intensity signal S1 in the illustration of FIG. 15 corresponds to a material (a Li quinolate complex, m/z=593) of the analysis electron-transport layer (ETL) 31T of the analysis EL layer 24T. An intensity signal S2 corresponds to a material (m/z=675, an estimated formula of C₅₂H₅₇N) of the analysis hole-transport layer (HTL) 29T of the analysis EL layer 24T. An intensity signal S3 corresponds to In (ITO, the anode) of the analysis EL layer 24T.

This embodiment shows an example that the TOF-SIMS analyzer 41 analyzes the analysis sub-pixel TR. However, the disclosure shall not be limited to this example. The disclosure is applicable to analysis techniques in which the charges are gradually accumulated on an object to be analyzed, such as, for example, analyses by Auger electron spectroscopy (AES) and irradiation with ions.