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Display device

專(zhuān)利號(hào)
US12178109B2
公開(kāi)日期
2024-12-24
申請(qǐng)人
SHARP KABUSHIKI KAISHA(JP Sakai)
發(fā)明人
Toshihiro Kaneko
IPC分類(lèi)
H10K59/88; H10K50/816; H10K50/82; H10K59/124; H10K59/131; H10K59/35
技術(shù)領(lǐng)域
analysis,layer,24t,el,film,sims,emitting,25t,22t,metal
地域: Sakai

摘要

A display device includes: a display element provided to a display region; an analysis element provided to a frame region disposed around the display region; and a sealing layer sealing the display element and the analysis element. The display element includes: a TFT layer including a resin film; and a light-emitting element layer including a first electrode, a functional layer, and a second electrode. The analysis element includes: a first metal film formed on the resin film; an analysis layer formed on the first metal film; a second metal film formed to cover at least a portion of an edge of the analysis layer, and electrically connected to the first metal film; and a ground wire electrically connected through the first metal film to the second metal film.

說(shuō)明書(shū)

The sub-pixel DR and the analysis sub-pixel TR are different in size in plan view but the same in structure. The sub-pixel DG and the analysis sub-pixel TG are also different in size in plan view but the same in structure. Moreover, the sub-pixel DB and the analysis sub-pixel TB are also different in size in plan view but the same in structure.

A base material 12 may be either a glass substrate, or a flexible substrate including a resin film such as polyimide. The flexible substrate may include: two resin films; and an inorganic insulating film sandwiched between the two resin films. A film made of, for example, polyethylene terephthalate may be attached to a lower surface of the base material 12. When the base material 12 is a flexible substrate, the display device 1 can be formed to be flexible.

A barrier layer 3 prevents such foreign objects as water and oxygen from reaching a thin-film transistor (TFT) layer 4 and a light-emitting element layer 5. An example of the barrier layer 3 includes a silicon oxide film, a silicon nitride film, or a silicon oxide nitride film formed by the chemical-vapor deposition (CVD), or a multilayer film including those films.

權(quán)利要求

1
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