Photoelectric conversion element and imaging device
地域：
Tokyo
摘要
A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode that is opposed to the first electrode; and an organic photoelectric conversion layer that is provided between the first electrode and the second electrode, and includes, as a first organic semiconductor material, a benzothienobenzothiophene-based compound represented by a general formula (1).
說(shuō)明書(shū)
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The present disclosure relates to, for example, a photoelectric conversion element using an organic material and an imaging device including the same.
For example, PTL 1 and NPTL 1 have reported that, for example, a combination of a coumarin dye and fullerene is used as a material of a photoelectric conversion layer that absorbs blue light and performs photoelectric conversion of the blue light.
- PTL 1: Japanese Unexamined Patent Application Publication No. 2012-129276
- NPTL 1: Jpn. J. Appl. Phys., Vol. 49, No. 11, pp. 111601.1-11601.4 (2010)
Incidentally, development of a photoelectric conversion element having high external quantum efficiency and high optical responsivity is desired.
It is desirable to provide a photoelectric conversion element and an imaging device that make it possible to improve external quantum efficiency and optical responsivity.
權(quán)利要求
The invention claimed is:1. A photoelectric conversion element comprising:a first electrode; a second electrode that is opposed to the first electrode; and an organic photoelectric conversion layer that is provided between the first electrode and the second electrode, and includes, as a first organic semiconductor material, a benzothienobenzothiophene-based compound represented by the following general formula (1): ![embedded image]()
(R1 to R4 are each independently a phenyl group, a biphenyl group, a terphenyl group, a naphthalene group, a phenylnaphthalene group, a biphenylnaphthalene group, a binaphthalene group, a thiophene group, a bithiophene group, a terthiophene group, a benzothiophene group, a phenyl benzothiophene group, a biphenyl benzothiophene benzofuran group, a phenyl benzofuran group, a biphenyl benzothiophene group, an alkane group, a cycloalkane group, a fluorene group, a phenylfluorene group, or any of derivatives thereof). 2. The photoelectric conversion element according to claim 1 , wherein the organic photoelectric conversion layer further includes fullerene or a fullerene derivative as a second organic semiconductor material. 3. The photoelectric conversion element according to claim 1 , wherein the organic photoelectric conversion layer further includes a third organic semiconductor material. 4. The photoelectric conversion element according to claim 3 , wherein the third organic semiconductor material absorbs light of any of wavelengths from 400 nm to 700 nm both inclusive. 5. The photoelectric conversion element according to claim 1 , wherein the organic photoelectric conversion layer absorbs light of all wavelengths within a range from 400 nm to 700 nm both inclusive. 6. The photoelectric conversion element according to claim 1 , wherein the first electrode includes a plurality of electrodes. 7. The photoelectric conversion element according to claim 1 , wherein a first electric charge blocking layer is further provided between the first electrode and the organic photoelectric conversion layer. 8. The photoelectric conversion element according to claim 1 , wherein a second electric charge blocking layer is further provided between the organic photoelectric conversion layer and the second electrode. 9. An imaging device provided with a plurality of pixels each including one or a plurality of organic photoelectric converters, the organic photoelectric converters each comprising:a first electrode; a second electrode that is opposed to the first electrode; and an organic photoelectric conversion layer that is provided between the first electrode and the second electrode, and includes, as a first organic semiconductor material, a benzothienobenzothiophene-based compound represented by the following general formula (1); ![embedded image]()
(R1 to R4 are each independently a phenyl group, a biphenyl group, a terphenyl group, a naphthalene group, a phenylnaphthalene group, a biphenylnaphthalene group, a binaphthalene group, a thiophene group, a bithiophene group, a terthiophene group, a benzothiophene group, a phenyl benzothiophene group, a biphenyl benzothiophene benzofuran group, a phenyl benzofuran group, a biphenyl benzothiophene group, an alkane group, a cycloalkane group, a fluorene group, a phenylfluorene group, or any of derivatives thereof). 10. The imaging device according to claim 9 , wherein one or a plurality of the organic photoelectric converters and one or a plurality of inorganic photoelectric converters that performs photoelectric conversion in a wavelength band different from the organic photoelectric converters are stacked in each of the pixels. 11. The imaging device according to claim 10 , whereinthe inorganic photoelectric converter is formed to be embedded in a semiconductor substrate, and the organic photoelectric converter is formed on a first surface side of the semiconductor substrate. 12. The imaging device according to claim 11 , wherein the semiconductor substrate has a second surface that is opposed to the first surface, and a multilayer wiring layer is formed on the second surface side. 13. The imaging device according to claim 11 , whereinthe organic photoelectric converter performs photoelectric conversion of blue light, and an inorganic photoelectric converter that performs photoelectric conversion of green light and an inorganic photoelectric converter that performs photoelectric conversion of red light are stacked in the semiconductor substrate. 14. The imaging device according to claim 9 , wherein a plurality of the organic photoelectric converters that performs photoelectric conversion in wavelength bands different from each other is stacked in each of the pixels.
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