The organic photoelectric converter 20 includes the lower electrode 21, the semiconductor layer 23, the photoelectric conversion layer 24, and the upper electrode 25 that are stacked in this order from the first surface (the surface 30S1) side of the semiconductor substrate 30. In addition, an insulating layer 22 is provided between the lower electrode 21 and the semiconductor layer 23. The lower electrode 21 is formed separately for each imaging element 10A, for example, and includes a readout electrode 21A and an accumulation electrode 21B that are separated from each other with the insulating layer 22 interposed therebetween as described in detail later. The readout electrode 21A of the lower electrode 21 is electrically coupled to the semiconductor layer 23 via an opening 22H provided in the insulating layer 22. FIG. 1 illustrates an example in which the semiconductor layer 23, the photoelectric conversion layer 24, and the upper electrode 25 are provided as common continuous layers for a plurality of imaging elements 10A, but the semiconductor layer 23, the photoelectric conversion layer 24, and the upper electrode 25 may be formed separately for each imaging element 10A, for example. For example, a dielectric film 26, an insulating film 27, and an interlayer insulating layer 28 are provided between the first surface (the surface 30S1) of the semiconductor substrate 30 and the lower electrode 21. A protective layer 51 is provided on the upper electrode 25. A light-shielding film 52 is provided, for example, at a position corresponding to the readout electrode 21A in the protective layer 51. It is sufficient if the light-shielding film 52A is provided to cover at least a region of the readout electrode 21A directly in contact with the semiconductor layer 23 without covering at least the accumulation electrode 21B. Optical members such a planarization layer (not illustrated) and an on-chip lens 53 are provided above the protective layer 51.
